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TMS27C510-200JL4

Texas Instruments

TMS27C510-200JL4 by Texas Instruments

TMS27C510-200JL4 by Texas Instruments is a 64KX8 EPROM with 200 ns access time, operating at 5V. It features a CMOS technology, 32 terminals in an IN-LINE package style. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,345 parts In-Stock

1+ parts

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2,345

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Vyrian

USA . 2,051 parts In-Stock

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2,051

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 488 parts In-Stock

1+ parts

$2.661

100+ parts

-

1k+ parts

$3.149

10k+ parts

-

488

$2.661

-

$3.149

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ChromeModa Solutions

Germany . 4,412 parts In-Stock

1+ parts

$2.990

100+ parts

$2.452

1k+ parts

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4,412

$2.990

$2.452

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IDEA Electronic Components Group

UK . 1,879 parts In-Stock

1+ parts

$2.990

100+ parts

-

1k+ parts

$2.691

10k+ parts

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1,879

$2.990

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$2.691

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AZTECH Wire

Italy . 295 parts In-Stock

1+ parts

$16.655

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295

$16.655

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One Stop Electronics

USA . 163 parts In-Stock

1+ parts

$26.000

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163

$26.000

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Corphita

USA . 1,220 parts In-Stock

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1,220

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DigiPath Technology Company

USA . 51 parts In-Stock

1+ parts

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$2.696

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51

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$2.696

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Overview

Experience unrivaled quality and reliability with the TMS27C510-200JL4 EPROM by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products that meet the highest standards. This EPROM is perfect for a wide range of applications, offering customers unmatched value and benefits. With its advanced technology and superior performance, the TMS27C510-200JL4 provides fast access times and ample memory density, making it the ideal choice for your electronic needs. Choose Texas Instruments for excellence in every product.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed packaging provides durability and protection for the EPROM, ensuring reliability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V makes it compatible with many systems and easy to integrate.

Organization: 64KX8

With an organization of 64Kx8, this EPROM offers a high memory capacity and efficient data storage.

Technology: CMOS

CMOS technology ensures low power consumption and high speed operation, making the EPROM efficient and reliable.

Maximum Access Time: 200 ns

A fast access time of 200ns ensures quick data retrieval, making this EPROM suitable for applications requiring high-speed performance.

Technical Specifications

EPROM TMS27C510-200JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

250 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-200JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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