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TMS27C512-1JL

Texas Instruments

TMS27C512-1JL by Texas Instruments

TMS27C512-1JL by Texas Instruments is a 64KX8 EPROM with 170 ns access time, 3-STATE output, and operates at 5V. It is used in commercial applications for storing data securely due to its UVPROM technology and through-hole terminal form.

Median Price

$14.000

Lifecycle Status

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20

In-Stock Inventory

1k+

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Forefront Electronics and Design

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DF Sales Co.

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American Microsemiconductor Inc.

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Vyrian

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Digiode

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MRC Electronics

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Classic Components Corporation

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Jameco Electronics

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Electronic Expediters

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A2Z Electronics, Inc.

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Bristol Electronics

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Electronics Depot

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Atlantic Semiconductor

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Prism Electronics

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LWI Electronics Inc

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Parana Technologies

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$4.189

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ChromeModa Solutions

Germany . 3,335 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 215 parts In-Stock

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One Stop Electronics

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DigiPath Technology Company

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Overview

Experience top-notch quality and reliability with the TMS27C512-1JL EPROM by Texas Instruments. Made with ceramic, metal-sealed cofired packaging, this asynchronous memory device offers 64KX8 organization and 3-state output characteristics. Perfect for a wide range of applications, from embedded systems to consumer electronics, this 524288-bit UVPROM provides fast access times and low power consumption. Trust in Texas Instruments' legacy of excellence and innovation, and unlock the potential of your designs with the TMS27C512-1JL.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures durability and reliability, making it suitable for use in a variety of environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent read and write operations, enhancing flexibility and efficiency.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with standard electronics systems and power sources.

Organization: 64KX8

The 64Kx8 organization provides ample storage capacity with efficient data retrieval and access.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed operation, making the EPROM energy-efficient and reliable.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM allows for storing large amounts of data in a compact form factor.

Maximum Access Time: 170 ns

The fast access time of 170 nanoseconds ensures quick read and write operations, improving overall system performance.

Technical Specifications

EPROM TMS27C512-1JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-1JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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