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M27C64A-20F6

STMicroelectronics

M27C64A-20F6 by STMicroelectronics

M27C64A-20F6 by STMicroelectronics is an 8KX8 EPROM with 65536 bit memory density, operating at 5V. It features a max access time of 200ns and is ideal for industrial applications requiring reliable non-volatile memory storage. The device has a parallel interface with 28 terminals in an in-line package style, suitable for various embedded systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Vyrian

USA . 2,424 parts In-Stock

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Digiode

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Anansix

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Chip Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Pegasus Components GmbH

Germany . 15 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15 parts In-Stock

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LWI Electronics Inc

India . 5 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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North Shore Components

USA . 1 parts In-Stock

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Vectronix, Inc

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 2,119 parts In-Stock

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$2.703

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$2.433

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Corohmni

South Africa . 699 parts In-Stock

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MKK Technologies

India . 2,299 parts In-Stock

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DigiPath Technology Company

USA . 2,299 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,685 parts In-Stock

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Microchip USA

USA . 323 parts In-Stock

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Ampacity Inc.

Singapore . 584 parts In-Stock

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AZTECH Wire

Italy . 556 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,840 parts In-Stock

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Continental Prestige Electronics

USA . 4,701 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,893 parts In-Stock

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Argo Parts USA

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Corphita

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Kepictronics

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Advanced Electronics

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Parana Technologies

USA . 535 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Unlock the power of your devices with the M27C64A-20F6 EPROM by STMicroelectronics. Known for their superior quality and reliability, STMicroelectronics delivers cutting-edge technology that meets the demands of industrial applications. This EPROM offers unparalleled value with its 8KX8 organization, 3-STATE output characteristics, and fast access time of 200 ns. Ideal for a wide range of uses, this EPROM is a must-have component for any project requiring reliable non-volatile memory storage. Trust STMicroelectronics to provide you with the innovation and performance you need to succeed.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent durability and protection for the EPROM, making it suitable for industrial applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation without the need for a clock signal, providing flexibility in various system designs.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources and simplifies integration into existing circuits.

Memory Density: 65536 bit

With a high memory density of 65536 bit, this EPROM can store a large amount of data, making it suitable for applications requiring extensive memory storage.

Maximum Operating Temperature: 85 °C

The EPROM's maximum operating temperature of 85°C ensures reliable performance even in high-temperature environments, making it ideal for industrial use.

Technology: CMOS

The CMOS technology used in this EPROM enables low power consumption and high speed operation, making it energy-efficient and efficient in data processing.

Technical Specifications

EPROM M27C64A-20F6 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

JESD-609 Code:

e3

Length:

36.92 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

5.97 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C64A-20F6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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