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TMS27C240-12JE

Texas Instruments

TMS27C240-12JE by Texas Instruments

TMS27C240-12JE by Texas Instruments is a 256KX16 EPROM with 120 ns access time, 3-STATE output, and operates at -40 to 85 °C. Commonly used in industrial applications for memory storage due to its 4194304 bit density and parallel interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,831 parts In-Stock

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Digiode

USA . 2,462 parts In-Stock

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2,462

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Distributors (Availability)

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One Stop Electronics

USA . 402 parts In-Stock

1+ parts

$2.000

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402

$2.000

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Parana Technologies

USA . 2,356 parts In-Stock

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$4.163

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$4.607

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DigiPath Technology Company

USA . 816 parts In-Stock

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$4.583

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$4.217

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816

$4.583

$4.217

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ChromeModa Solutions

Germany . 6,537 parts In-Stock

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$4.677

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$3.835

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6,537

$4.677

$3.835

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IDEA Electronic Components Group

UK . 1,801 parts In-Stock

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$4.677

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$4.209

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1,801

$4.677

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AZTECH Wire

Italy . 484 parts In-Stock

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$5.660

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$5.660

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Corphita

USA . 718 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS27C240-12JE EPROM by Texas Instruments. Crafted with precision and expertise, this high-quality memory IC offers unparalleled reliability and performance in a wide range of industrial applications. Experience seamless operation and enhanced efficiency with its advanced features and 3-state output characteristics, all while benefiting from the value and advantages that only Texas Instruments can deliver. Trust in the TMS27C240-12JE to elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and reliability of the EPROM, making it suitable for harsh industrial environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the EPROM, providing flexibility in data access and retrieval.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with standard voltage levels used in most electronic devices.

No. of Terminals: 40

The 40 terminals provide ample connectivity options and ease of integration into existing circuitry.

Maximum Operating Temperature: 85 °C

The EPROM can operate efficiently at high temperatures, making it suitable for industrial applications where temperature fluctuations may occur.

Memory Density: 4194304 bit

The high memory density allows for storage of a large amount of data, making the EPROM ideal for applications requiring extensive data storage.

Maximum Access Time: 120 ns

The fast access time of 120ns ensures quick retrieval of data from the EPROM, making it suitable for high-performance applications.

Technical Specifications

EPROM TMS27C240-12JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Length:

52.07 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C240-12JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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