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TMS2732A-35JL

Texas Instruments

TMS2732A-35JL by Texas Instruments

TMS2732A-35JL by Texas Instruments is a 4KX8 EPROM with 32768 bit memory density and 350 ns access time. It operates at 5V, has 24 terminals, and supports a programming voltage of 21V. Commonly used in commercial applications requiring fast memory access and reliable data storage.

Median Price

$8.615

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$4.980

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$12.250

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$12.250

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Vyrian

USA . 3,897 parts In-Stock

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3,897

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Digiode

USA . 2,519 parts In-Stock

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Q Components

USA . 320 parts In-Stock

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320

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Electronic Expediters

USA . 29 parts In-Stock

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Prism Electronics

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Electronics Depot

USA . 6 parts In-Stock

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PC Components Company LLC

USA . 5 parts In-Stock

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Bristol Electronics

USA . 5 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3 parts In-Stock

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Resion

USA . 3 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 183 parts In-Stock

1+ parts

$3.927

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$4.400

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183

$3.927

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$4.400

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IDEA Electronic Components Group

UK . 1,297 parts In-Stock

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$4.412

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$3.971

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1,297

$4.412

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$3.971

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ChromeModa Solutions

Germany . 833 parts In-Stock

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$4.412

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$3.618

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833

$4.412

$3.618

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AZTECH Wire

Italy . 591 parts In-Stock

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$10.221

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One Stop Electronics

USA . 1,404 parts In-Stock

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$17.000

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$17.000

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Corphita

USA . 1,617 parts In-Stock

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1,617

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DigiPath Technology Company

USA . 1,566 parts In-Stock

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$3.978

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Assy Fe

Spain . 258 parts In-Stock

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Overview

Unlock the power of innovation with the TMS2732A-35JL EPROM by Texas Instruments. Built with precision and excellence, this high-quality memory chip offers unmatched reliability and performance in a wide range of applications. Whether you're designing consumer electronics, industrial equipment, or automotive systems, this versatile EPROM delivers exceptional value, benefits, and advantages to meet your unique needs. Trust Texas Instruments for cutting-edge technology that drives your success.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat dissipation, making the EPROM more reliable and durable for long-term use.

Input/Output Type: COMMON

Common input/output type simplifies system design and integration, making it easier to work with other components.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with most systems and power sources.

Organization: 4KX8

4Kx8 organization allows for efficient storage and retrieval of data, optimizing performance.

Output Characteristics: 3-STATE

3-STATE output characteristics enable multiple EPROM chips to be connected to a bus without interference, enhancing flexibility in system design.

Programming Voltage (V): 21

High programming voltage of 21V allows for fast and efficient data programming, reducing overall system operation time.

Technology: MOS

MOS technology offers low power consumption and high speed operation, making the EPROM energy efficient and responsive.

Memory Width: 8

8-bit memory width accommodates a wide range of data types and formats, ensuring compatibility with various applications.

No. of Words: 4096 words

4096 words capacity provides ample storage for data, programs, and instructions, allowing for comprehensive usage.

Maximum Access Time: 350 ns

Fast access time of 350 ns allows for quick retrieval of data, enhancing system performance and responsiveness.

Technical Specifications

EPROM TMS2732A-35JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2732A-35JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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