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TMS27C64-25JL

Texas Instruments

TMS27C64-25JL by Texas Instruments

TMS27C64-25JL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 250 ns access time, and 65536 bit memory density. Commonly used in commercial applications for storing data securely due to its 3-STATE output characteristics and parallel interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,267 parts In-Stock

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Digiode

USA . 1,202 parts In-Stock

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Q Components

USA . 206 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 87 parts In-Stock

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Odintec Ltd.

Israel . 50 parts In-Stock

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ABC Electronics Ltd.

UK . 49 parts In-Stock

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Electronic Expediters

USA . 21 parts In-Stock

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MRC Electronics

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PC Components Company LLC

USA . 13 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 13 parts In-Stock

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ECAB

Sweden . 13 parts In-Stock

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Bristol Electronics

USA . 13 parts In-Stock

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Holdelec - ElecDif-Pro

France . 13 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 3 parts In-Stock

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Parana Technologies

USA . 430 parts In-Stock

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$3.925

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$4.397

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ChromeModa Solutions

Germany . 4,127 parts In-Stock

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$4.410

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IDEA Electronic Components Group

UK . 223 parts In-Stock

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$3.969

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One Stop Electronics

USA . 1,375 parts In-Stock

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AZTECH Wire

Italy . 677 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 939 parts In-Stock

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$3.976

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Overview

Unlock endless possibilities with the TMS27C64-25JL EPROM by Texas Instruments. Crafted with precision and expertise, this reliable memory solution offers unparalleled performance for a wide range of applications. From automotive to industrial, this versatile product guarantees seamless operation and efficient data storage. Trust Texas Instruments to deliver superior quality and innovation in every chip. Elevate your projects with the TMS27C64-25JL and experience the difference today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the EPROM suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most systems and easy integration.

Organization: 8KX8

Optimal organization for efficient storage and retrieval of data.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Maximum Access Time: 250 ns

Fast access time ensures quick data retrieval for improved performance.

Technical Specifications

EPROM TMS27C64-25JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64-25JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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