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TMS27C32-10JE

Texas Instruments

TMS27C32-10JE by Texas Instruments

TMS27C32-10JE by Texas Instruments is an EPROM with 4KX8 organization, 3-STATE output, and 100 ns access time. It operates in industrial temperature range and has a memory density of 32768 bit. Commonly used for parallel applications requiring fast data access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,703 parts In-Stock

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7,703

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Digiode

USA . 629 parts In-Stock

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629

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Distributors (Availability)

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Parana Technologies

USA . 1,315 parts In-Stock

1+ parts

$4.642

100+ parts

-

1k+ parts

$5.117

10k+ parts

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1,315

$4.642

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$5.117

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DigiPath Technology Company

USA . 1,793 parts In-Stock

1+ parts

$5.112

100+ parts

$4.703

1k+ parts

-

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1,793

$5.112

$4.703

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ChromeModa Solutions

Germany . 1,697 parts In-Stock

1+ parts

$5.216

100+ parts

$4.277

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-

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1,697

$5.216

$4.277

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IDEA Electronic Components Group

UK . 284 parts In-Stock

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$5.216

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$4.694

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284

$5.216

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$4.694

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One Stop Electronics

USA . 1,448 parts In-Stock

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$7.000

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1,448

$7.000

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AZTECH Wire

Italy . 657 parts In-Stock

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$19.148

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657

$19.148

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Corphita

USA . 2,590 parts In-Stock

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Overview

Elevate your projects with the TMS27C32-10JE EPROM by Texas Instruments, a high-quality memory IC designed for industrial-grade applications. With its reliable performance and durable construction, this UVPROM chip offers customers peace of mind knowing their data is secure. Whether you're working on embedded systems, automotive electronics, or consumer devices, the TMS27C32-10JE provides the memory density and fast access time you need to power through your projects effortlessly. Trust in Texas Instruments for top-notch technology that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material ensures durability and reliability for the EPROM, making it suitable for industrial environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexibility in timing and control, making it versatile for various applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is standard and commonly available, making it easy to integrate into existing systems.

Output Characteristics: 3-STATE

The 3-state output allows for multiple devices to be connected to a single bus line, enabling efficient communication.

Temperature Grade: INDUSTRIAL

The EPROM is designed to withstand industrial temperature ranges, ensuring reliable performance in harsh conditions.

Memory IC Type: UVPROM

The UVPROM technology offers reliable non-volatile memory storage, ensuring data retention even in power-off situations.

Technical Specifications

EPROM TMS27C32-10JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C32-10JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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