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TMS27C512-15JE

Texas Instruments

TMS27C512-15JE by Texas Instruments

TMS27C512-15JE by Texas Instruments is a 64KX8 EPROM with 150ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for storing data securely with a memory density of 524288 bit.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,920 parts In-Stock

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Digiode

USA . 583 parts In-Stock

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583

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Q Components

USA . 10 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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Parana Technologies

USA . 1,386 parts In-Stock

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$3.432

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$3.957

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$3.432

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$3.957

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DigiPath Technology Company

USA . 484 parts In-Stock

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$3.779

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$3.477

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$3.477

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ChromeModa Solutions

Germany . 4,418 parts In-Stock

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$3.856

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$3.162

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$3.856

$3.162

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IDEA Electronic Components Group

UK . 2,242 parts In-Stock

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$3.856

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$3.470

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$3.856

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$3.470

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AZTECH Wire

Italy . 299 parts In-Stock

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$6.258

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One Stop Electronics

USA . 992 parts In-Stock

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$28.000

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992

$28.000

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A-Z Elektronik GmbH

Germany . 5,636 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 2,407 parts In-Stock

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Kepictronics

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Overview

Elevate your projects with the TMS27C512-15JE by Texas Instruments, a top-tier EPROM that stands out for its quality and reliability. Designed with advanced technology and precision engineering, this memory device offers exceptional performance and durability, making it ideal for industrial applications where speed and accuracy are critical. With a wide range of features and benefits, including high memory density, fast access time, and low power consumption, the TMS27C512-15JE delivers value and efficiency to customers looking for superior memory solutions. Choose Texas Instruments for cutting-edge technology you can trust.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and protection for the EPROM, ensuring a long lifespan and reliable performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this EPROM compatible with a wide range of systems and easy to integrate.

No. of Words: 65536 words

With a large capacity of 64K words, this EPROM allows for storing a significant amount of data, making it suitable for various applications.

Technology: CMOS

Utilizing CMOS technology results in lower power consumption and enhanced performance, making this EPROM efficient and reliable.

Maximum Access Time: 150 ns

The fast access time of 150 ns ensures quick read and write operations, improving the overall responsiveness of the EPROM.

Technical Specifications

EPROM TMS27C512-15JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-15JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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