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TMS27C010A-200JE4

Texas Instruments

TMS27C010A-200JE4 by Texas Instruments

TMS27C010A-200JE4 by Texas Instruments is a 128KX8 EPROM with 131072 words, 200 ns access time, and 5V supply voltage. It is used in industrial applications for storing data securely with its CMOS technology and asynchronous operating mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,123 parts In-Stock

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Digiode

USA . 952 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 421 parts In-Stock

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$4.506

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$4.949

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$4.506

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$4.949

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DigiPath Technology Company

USA . 2,340 parts In-Stock

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$4.962

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ChromeModa Solutions

Germany . 5,732 parts In-Stock

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$5.063

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$4.152

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$5.063

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IDEA Electronic Components Group

UK . 617 parts In-Stock

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$5.063

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$4.557

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617

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AZTECH Wire

Italy . 375 parts In-Stock

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$11.945

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One Stop Electronics

USA . 758 parts In-Stock

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$22.000

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Corphita

USA . 2,102 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the TMS27C010A-200JE4 EPROM. This cutting-edge memory device offers exceptional performance and versatility for a wide range of industrial applications. With a 128Kx8 organization and 3-STATE output characteristics, this EPROM provides seamless operation and efficient data storage. Trust in Texas Instruments for innovative technology and unmatched value in electronic components. Welcome to the future of memory solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent durability and protection for the EPROM chip, ensuring reliable performance in various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement makes it compatible with most systems and easy to integrate.

Organization: 128KX8

Offers a large memory capacity and organized as 128K words of 8 bits each, suitable for storing a significant amount of data.

Technology: CMOS

Utilizes CMOS technology, providing low power consumption, high speed, and reliable operation, making it energy-efficient and efficient in data processing.

Maximum Access Time: 200 ns

Provides quick access to data stored in the EPROM, ensuring fast read speed for efficient operations.

Technical Specifications

EPROM TMS27C010A-200JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C010A-200JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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