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TMS27C010A-200JE

Texas Instruments

TMS27C010A-200JE by Texas Instruments

TMS27C010A-200JE by Texas Instruments is a 128KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 200ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,340 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,340

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-

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Digiode

USA . 2,436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,436

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,122 parts In-Stock

1+ parts

$3.811

100+ parts

-

1k+ parts

$4.301

10k+ parts

-

1,122

$3.811

-

$4.301

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ChromeModa Solutions

Germany . 3,003 parts In-Stock

1+ parts

$4.282

100+ parts

$3.511

1k+ parts

-

10k+ parts

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3,003

$4.282

$3.511

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IDEA Electronic Components Group

UK . 720 parts In-Stock

1+ parts

$4.282

100+ parts

-

1k+ parts

$3.854

10k+ parts

-

720

$4.282

-

$3.854

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AZTECH Wire

Italy . 399 parts In-Stock

1+ parts

$7.578

100+ parts

-

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399

$7.578

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One Stop Electronics

USA . 559 parts In-Stock

1+ parts

$27.000

100+ parts

-

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559

$27.000

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Corphita

USA . 4,900 parts In-Stock

1+ parts

-

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4,900

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DigiPath Technology Company

USA . 664 parts In-Stock

1+ parts

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100+ parts

$3.861

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664

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$3.861

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Overview

Enhance your electronic projects with the TMS27C010A-200JE EPROM by Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers cutting-edge technology to meet your needs. This versatile EPROM is perfect for a variety of applications, offering fast access times and low power consumption. Trust in Texas Instruments to provide top-notch performance in a compact package, allowing you to take your designs to the next level. Unlock the potential of your projects with the TMS27C010A-200JE EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, ensuring reliable performance even in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and power sources.

Organization: 128KX8

With an organization of 128KX8, the EPROM offers a high level of memory capacity and data organization for efficient data storage and retrieval.

Technology: CMOS

Utilizing CMOS technology results in low power consumption, making the EPROM energy-efficient and suitable for battery-operated devices.

Maximum Access Time: 200 ns

The fast access time of 200 ns ensures quick read and write operations, enhancing the overall performance of the EPROM.

Technical Specifications

EPROM TMS27C010A-200JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C010A-200JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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