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TMS2764-30JL

Texas Instruments

TMS2764-30JL by Texas Instruments

TMS2764-30JL by Texas Instruments is an 8KX8 EPROM with a memory density of 65536 bit. It operates at a max access time of 300 ns and has a programming voltage of 21V. Commonly used in commercial applications, this MOS technology device features a rectangular ceramic package with 28 terminals in an in-line style.

Median Price

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Lifecycle Status

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9

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

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Q Components

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Corel Iberica Componentes, S.L.

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Electronic Expediters

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Rotakorn

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Bristol Electronics

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Parana Technologies

USA . 1,388 parts In-Stock

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DigiPath Technology Company

USA . 770 parts In-Stock

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ChromeModa Solutions

Germany . 4,335 parts In-Stock

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IDEA Electronic Components Group

UK . 1,374 parts In-Stock

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AZTECH Wire

Italy . 728 parts In-Stock

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One Stop Electronics

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Corphita

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Overview

Unlock the power of cutting-edge technology with the TMS2764-30JL EPROM by Texas Instruments. Crafted from high-quality ceramic materials, this versatile chip offers a wide range of applications for your electronic projects. With a nominal supply voltage of 5V and a 3-STATE output characteristic, this EPROM delivers reliable performance in a compact rectangular package. Trust Texas Instruments for top-of-the-line products that provide value and efficiency to customers seeking quality components for their designs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent protection against environmental factors and ensures durability, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with a wide range of systems and ensures stable performance.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and compatibility with various circuit designs.

Organization: 8KX8

An organized structure of 8KX8 provides efficient storage and retrieval of data, enhancing overall system performance.

Output Characteristics: 3-STATE

3-STATE output characteristics enable multiple devices to be connected to a bus without interference, improving system flexibility.

Programming Voltage (V): 21

The programming voltage of 21V ensures reliable and accurate programming of data, enhancing the overall functionality of the device.

Technology: MOS

Using MOS technology offers low power consumption and high-speed operation, making it an efficient choice for memory applications.

Memory Density: 65536 bit

With a high memory density of 65536 bits, this EPROM can store a large amount of data in a compact design, making it space-efficient.

Maximum Access Time: 300 ns

The fast maximum access time of 300ns ensures quick data retrieval, enhancing the overall performance of the device.

Technical Specifications

EPROM TMS2764-30JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

65536 bit

Memory Width:

8

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2764-30JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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