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TMS27C010A-150JL4

Texas Instruments

TMS27C010A-150JL4 by Texas Instruments

TMS27C010A-150JL4 by Texas Instruments is a 128KX8 EPROM with 150 ns access time, 5V supply voltage, and 32 terminals. It operates in asynchronous mode with 3-STATE output characteristics. Commonly used for memory storage applications due to its high density and fast access time.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,735 parts In-Stock

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3,735

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Digiode

USA . 652 parts In-Stock

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652

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Parana Technologies

USA . 2,143 parts In-Stock

1+ parts

$2.246

100+ parts

-

1k+ parts

$2.750

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2,143

$2.246

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$2.750

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DigiPath Technology Company

USA . 173 parts In-Stock

1+ parts

$2.474

100+ parts

$2.276

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173

$2.474

$2.276

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ChromeModa Solutions

Germany . 3,771 parts In-Stock

1+ parts

$2.524

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$2.070

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3,771

$2.524

$2.070

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IDEA Electronic Components Group

UK . 541 parts In-Stock

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$2.524

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-

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$2.272

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541

$2.524

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$2.272

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One Stop Electronics

USA . 871 parts In-Stock

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$10.000

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871

$10.000

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AZTECH Wire

Italy . 188 parts In-Stock

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$12.254

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188

$12.254

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Corphita

USA . 1,902 parts In-Stock

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Overview

Unlock the power of reliable memory storage with the TMS27C010A-150JL4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in every product they create. The TMS27C010A-150JL4 EPROM offers unparalleled value with its 128KX8 organization and 3-STATE output characteristics, making it perfect for a wide range of applications. Whether you're in need of secure data storage or fast access times, this EPROM delivers on all fronts. Trust Texas Instruments to provide the cutting-edge technology you need for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and protection, making this EPROM suitable for harsh environments where reliability is key.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexibility and easy integration into various systems without the need for strict timing constraints.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with most digital systems and simplifies power management.

No. of Terminals: 32

With 32 terminals, this EPROM offers a good balance between functionality and ease of use, allowing for efficient connections and control.

Organization: 128KX8

The 128KX8 organization provides a high memory capacity and efficient data storage, suitable for a wide range of applications.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, fast operation, and high noise immunity, making this EPROM a reliable choice for digital systems.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this EPROM can store a large amount of data efficiently, ideal for applications requiring extensive data storage.

Technical Specifications

EPROM TMS27C010A-150JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C010A-150JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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