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TMS27C510-25JE

Texas Instruments

TMS27C510-25JE by Texas Instruments

TMS27C510-25JE by Texas Instruments is a 64KX8 EPROM with 250ns access time, operating at -40 to 85 °C. It features 3-STATE output characteristics, CMOS technology, and operates in parallel mode. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,635 parts In-Stock

1+ parts

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5,635

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Digiode

USA . 316 parts In-Stock

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316

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,803 parts In-Stock

1+ parts

$1.827

100+ parts

-

1k+ parts

$2.379

10k+ parts

-

1,803

$1.827

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$2.379

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DigiPath Technology Company

USA . 2,187 parts In-Stock

1+ parts

$2.012

100+ parts

$1.851

1k+ parts

-

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2,187

$2.012

$1.851

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ChromeModa Solutions

Germany . 3,248 parts In-Stock

1+ parts

$2.053

100+ parts

$1.683

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3,248

$2.053

$1.683

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IDEA Electronic Components Group

UK . 1,071 parts In-Stock

1+ parts

$2.053

100+ parts

-

1k+ parts

$1.848

10k+ parts

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1,071

$2.053

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$1.848

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AZTECH Wire

Italy . 529 parts In-Stock

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$7.845

100+ parts

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529

$7.845

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One Stop Electronics

USA . 608 parts In-Stock

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$10.000

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608

$10.000

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Corphita

USA . 1,666 parts In-Stock

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Overview

Enhance your electronic projects with the TMS27C510-25JE EPROM from Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a variety of applications. The TMS27C510-25JE offers customers value and benefits with its 64KX8 organization, 3-STATE output characteristics, and industrial-grade temperature range. With a memory density of 524288 bits and a fast access time of 250ns, this EPROM is perfect for industrial and commercial use. Upgrade your designs with the exceptional performance of the TMS27C510-25JE EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and resistance to environmental factors, making this EPROM suitable for industrial applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing and communication, making this EPROM versatile for various system designs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and simplifies integration into existing systems.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple devices to share bus lines, enabling efficient data transfer and communication within a system.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high noise immunity, making this EPROM energy-efficient and reliable for long-term use.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM provides ample storage capacity for data and program storage requirements in industrial applications.

Technical Specifications

EPROM TMS27C510-25JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-25JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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