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TMS27C256-20JE4

Texas Instruments

TMS27C256-20JE4 by Texas Instruments

TMS27C256-20JE4 by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 200ns and memory density of 262144 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,982 parts In-Stock

1+ parts

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4,982

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Digiode

USA . 3,787 parts In-Stock

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3,787

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GES GmbH

Germany . 19 parts In-Stock

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19

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,817 parts In-Stock

1+ parts

$3.423

100+ parts

-

1k+ parts

$3.947

10k+ parts

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1,817

$3.423

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$3.947

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DigiPath Technology Company

USA . 837 parts In-Stock

1+ parts

$3.769

100+ parts

$3.468

1k+ parts

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837

$3.769

$3.468

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ChromeModa Solutions

Germany . 902 parts In-Stock

1+ parts

$3.846

100+ parts

$3.154

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902

$3.846

$3.154

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IDEA Electronic Components Group

UK . 94 parts In-Stock

1+ parts

$3.846

100+ parts

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$3.461

10k+ parts

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94

$3.846

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$3.461

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AZTECH Wire

Italy . 330 parts In-Stock

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$8.770

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330

$8.770

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One Stop Electronics

USA . 1,334 parts In-Stock

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$20.000

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1,334

$20.000

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Corphita

USA . 658 parts In-Stock

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658

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Overview

Unlock the power of reliable data storage with the TMS27C256-20JE4 EPROM by Texas Instruments. Crafted with precision and expertise, this ceramic, metal-sealed co-fired package offers unparalleled performance in industrial settings. Perfect for applications requiring fast access times and low standby currents, this EPROM ensures your data is secure and accessible when you need it most. Trust Texas Instruments to deliver quality and innovation in every product, providing you with peace of mind and unmatched value for your investment.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection for the EPROM, ensuring durability and reliability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V makes it compatible with standard power sources and easy to integrate into existing systems.

Memory Density: 262144 bit

With a high memory density, this EPROM can store a large amount of data in a compact form factor, making it ideal for applications requiring extensive memory storage.

Maximum Operating Temperature: 85 °C

The EPROM can operate effectively in a wide range of temperatures, making it suitable for industrial applications where temperature fluctuations may occur.

Organization: 32KX8

The organization of 32KX8 allows for efficient data storage and retrieval, enabling seamless operation in various applications.

Technology: CMOS

The CMOS technology used in this EPROM ensures low power consumption and high reliability, making it a cost-effective and dependable choice.

Maximum Access Time: 200 ns

The fast access time of 200ns ensures quick read and write operations, enhancing the overall performance of the EPROM.

Technical Specifications

EPROM TMS27C256-20JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-20JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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