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TMS2732A-17JL

Texas Instruments

TMS2732A-17JL by Texas Instruments

TMS2732A-17JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 170ns and uses NMOS technology. Suitable for commercial applications requiring fast memory access in parallel configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,127 parts In-Stock

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Digiode

USA . 1,743 parts In-Stock

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1,743

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Electronic Expediters

USA . 95 parts In-Stock

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95

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Q Components

USA . 27 parts In-Stock

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Inland Empire Components Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,202 parts In-Stock

1+ parts

$5.044

100+ parts

-

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$5.605

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2,202

$5.044

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$5.605

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DigiPath Technology Company

USA . 1,105 parts In-Stock

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$5.554

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$5.109

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1,105

$5.554

$5.109

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IDEA Electronic Components Group

UK . 1,637 parts In-Stock

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$5.667

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$5.100

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1,637

$5.667

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$5.100

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ChromeModa Solutions

Germany . 310 parts In-Stock

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$5.667

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$4.647

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310

$5.667

$4.647

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AZTECH Wire

Italy . 745 parts In-Stock

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$16.335

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745

$16.335

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One Stop Electronics

USA . 1,344 parts In-Stock

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$22.000

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Corphita

USA . 259 parts In-Stock

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Overview

Unlock the power of innovation with the TMS2732A-17JL EPROM by Texas Instruments. Known for their superior quality and reliability, Texas Instruments brings you a product that is perfect for a wide range of applications. This EPROM offers customers exceptional value with its 4Kx8 organization, 3-STATE output characteristics, and fast access time of 170 ns. Trust in Texas Instruments to deliver cutting-edge technology that meets your memory storage needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent protection for the EPROM, making it durable and reliable for long-term use.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of input and output signals, providing flexibility in data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems, making integration seamless.

No. of Terminals: 24

With 24 terminals, this EPROM offers a sufficient number of connections for data transfer and control, making it versatile for various applications.

Memory Width: 8

The 8-bit memory width allows for efficient data storage and retrieval, enhancing the performance of the EPROM in handling large amounts of information.

Technical Specifications

EPROM TMS2732A-17JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS2732A-17JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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