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SMJ27C256-25JM

Texas Instruments

SMJ27C256-25JM by Texas Instruments

SMJ27C256-25JM by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. Suitable for military applications, it features a CMOS technology, parallel interface, and common I/O type.

Median Price

$687.510

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 25 parts In-Stock

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Vyrian

USA . 4,124 parts In-Stock

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Digiode

USA . 2,732 parts In-Stock

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Odi Ramu Company

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PC Components Company LLC

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Florida Circuit

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Bristol Electronics

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ComSIT Distribution GmbH

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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Parana Technologies

USA . 313 parts In-Stock

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$2.749

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$3.234

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DigiPath Technology Company

USA . 1,313 parts In-Stock

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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ChromeModa Solutions

Germany . 299 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 818 parts In-Stock

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Corphita

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Overview

Discover the superior quality and reliability of the SMJ27C256-25JM by Texas Instruments, a top-of-the-line EPROM that offers unmatched performance. With cutting-edge technology and a trusted manufacturer like Texas Instruments, this product ensures optimal functionality and durability. Ideal for a variety of applications, this EPROM provides customers with a seamless experience and peace of mind knowing they are investing in a premium product. Upgrade your systems today with the SMJ27C256-25JM and experience the difference it can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed body material provides durability and protection for the EPROM, making it suitable for rugged environments.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures quality and reliability in performance, making it a robust choice for critical applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronics systems, making integration easier.

Organization: 32KX8

The 32KX8 organization provides a large memory capacity, allowing for storage of a significant amount of data in a single EPROM.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliability and performance in extreme operating conditions, making it suitable for demanding applications.

Memory IC Type: UVPROM

The UVPROM memory IC type offers non-volatile storage with ultra-violet erasable technology, providing flexibility and reusability for the EPROM.

Technical Specifications

EPROM SMJ27C256-25JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C256-25JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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