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TMS27C010-150JL

Texas Instruments

TMS27C010-150JL by Texas Instruments

TMS27C010-150JL by Texas Instruments is a 128KX8 EPROM with 3-STATE output, 150 ns access time, and 1048576 bit memory density. It operates at temperatures from 0 to 70 °C and has a supply voltage of 5V. Commonly used in commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,531 parts In-Stock

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Digiode

USA . 1,524 parts In-Stock

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1,524

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,105 parts In-Stock

1+ parts

$5.204

100+ parts

-

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$5.814

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1,105

$5.204

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$5.814

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DigiPath Technology Company

USA . 53 parts In-Stock

1+ parts

$5.730

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53

$5.730

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ChromeModa Solutions

Germany . 2,391 parts In-Stock

1+ parts

$5.847

100+ parts

$4.795

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2,391

$5.847

$4.795

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IDEA Electronic Components Group

UK . 174 parts In-Stock

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$5.847

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$5.262

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174

$5.847

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$5.262

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AZTECH Wire

Italy . 720 parts In-Stock

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$13.099

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720

$13.099

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One Stop Electronics

USA . 1,362 parts In-Stock

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$15.000

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1,362

$15.000

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Corphita

USA . 1,975 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C010-150JL EPROM by Texas Instruments. Known for their top-notch quality and cutting-edge technology, Texas Instruments delivers a superior product that exceeds industry standards. Ideal for various applications, this EPROM offers fast access times and low standby currents, making it a valuable asset for any project. Trust in Texas Instruments to provide you with the performance and durability you need to succeed.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity and protection from environmental factors, ensuring the longevity and reliability of the EPROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes this EPROM compatible with a wide range of systems and easy to integrate.

Output Characteristics: 3-STATE

The 3-STATE output allows the EPROM to effectively tristate its output, enabling efficient control and management of data flow in the system.

Technology: CMOS

Using CMOS technology ensures low power consumption and high noise immunity, making this EPROM energy-efficient and reliable in various operating conditions.

Maximum Access Time: 150 ns

With a fast maximum access time of 150 ns, this EPROM can quickly retrieve stored data, improving overall system performance.

Technical Specifications

EPROM TMS27C010-150JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T32

Memory Density:

1048576 bit

Memory Width:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS27C010-150JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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