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TMS27C49-5JTL

Texas Instruments

TMS27C49-5JTL by Texas Instruments

TMS27C49-5JTL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 55 ns access time, and 65536 bit memory density. It operates at 5V and has a parallel interface. Ideal for commercial applications requiring non-volatile memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,211 parts In-Stock

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4,211

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Vyrian

USA . 4,045 parts In-Stock

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4,045

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,842 parts In-Stock

1+ parts

$2.434

100+ parts

-

1k+ parts

$2.931

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1,842

$2.434

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$2.931

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DigiPath Technology Company

USA . 2,266 parts In-Stock

1+ parts

$2.680

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2,266

$2.680

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IDEA Electronic Components Group

UK . 2,182 parts In-Stock

1+ parts

$2.735

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-

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$2.462

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2,182

$2.735

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$2.462

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ChromeModa Solutions

Germany . 2,029 parts In-Stock

1+ parts

$2.735

100+ parts

$2.243

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-

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2,029

$2.735

$2.243

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One Stop Electronics

USA . 1,605 parts In-Stock

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$13.000

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1,605

$13.000

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AZTECH Wire

Italy . 317 parts In-Stock

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$14.281

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317

$14.281

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Corphita

USA . 3,290 parts In-Stock

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3,290

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Overview

Unlock the power of cutting-edge technology with the TMS27C49-5JTL EPROM by Texas Instruments. Crafted from the finest materials and backed by a legacy of innovation, this versatile memory device offers unparalleled reliability and performance in a wide range of applications. Say goodbye to data loss and hello to seamless operation with this high-quality solution that brings value, efficiency, and peace of mind to every customer. Elevate your projects with Texas Instruments and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and stability, making this product suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent control of read and write operations, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of electronic systems and devices.

Organization: 8KX8

The 8KX8 organization provides a high memory capacity with efficient data storage and retrieval capabilities.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed performance, making this product energy-efficient and reliable.

Maximum Access Time: 55 ns

The maximum access time of 55 ns ensures fast read and write operations, enhancing the overall responsiveness of the product.

Technical Specifications

EPROM TMS27C49-5JTL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

TMS27C49-5JTL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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