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TMS27C512-2JL

Texas Instruments

TMS27C512-2JL by Texas Instruments

TMS27C512-2JL by Texas Instruments is a 64KX8 EPROM with 200ns access time, 5V supply voltage, and 3-STATE output. Commonly used in commercial applications, it features a CMOS technology, operates asynchronously, and has a memory density of 524288 bit.

Median Price

$8.775

Lifecycle Status

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37

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1k+

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Freelance Electronics

USA . 30 parts In-Stock

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Component Electronics Inc.

Canada . 119 parts In-Stock

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Bristol Electronics

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American Microsemiconductor Inc.

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Forefront Electronics and Design

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Digiode

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LIBRA Elektronik GmbH

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Lakeland Logistics Inc

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PC Components Company LLC

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Holdelec - ElecDif-Pro

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Inland Empire Components Inc.

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Mentor Electronics Marketing, LLC

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Parana Technologies

USA . 1,338 parts In-Stock

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ChromeModa Solutions

Germany . 5,527 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 387 parts In-Stock

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DigiPath Technology Company

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Metaverse IC Inc.

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Overview

Unlock the power of reliable data storage with the TMS27C512-2JL by Texas Instruments. Crafted from high-quality materials and designed for optimal performance, this EPROM is a game-changer in the world of memory technology. Whether you're working on industrial automation, automotive electronics, or consumer appliances, this versatile chip offers seamless integration and efficient operation. Trust Texas Instruments for top-notch quality and unleash the full potential of your projects with the TMS27C512-2JL.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides strong protection for the internal components, ensuring durability and reliability.

Nominal Supply Voltage / Vsup (V): 5

Suitable voltage level for efficient operation.

Organization: 64KX8

Offers a large memory capacity with 64K words, 8 bits each, for storing data.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the product energy-efficient and reliable.

Maximum Access Time: 200 ns

Fast access time ensures quick retrieval of data, making the product suitable for time-sensitive applications.

Technical Specifications

EPROM TMS27C512-2JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-2JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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