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TMS27C256JL-12

Texas Instruments

TMS27C256JL-12 by Texas Instruments

TMS27C256JL-12 by Texas Instruments is a 32KX8 EPROM with 262144 bit memory density. It operates in asynchronous mode with 120 ns access time and supports parallel interface. Ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,353 parts In-Stock

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8,353

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Digiode

USA . 2,722 parts In-Stock

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2,722

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,495 parts In-Stock

1+ parts

$3.123

100+ parts

-

1k+ parts

$3.642

10k+ parts

-

1,495

$3.123

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$3.642

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DigiPath Technology Company

USA . 1,346 parts In-Stock

1+ parts

$3.439

100+ parts

$3.164

1k+ parts

-

10k+ parts

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1,346

$3.439

$3.164

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ChromeModa Solutions

Germany . 3,153 parts In-Stock

1+ parts

$3.509

100+ parts

$2.877

1k+ parts

-

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3,153

$3.509

$2.877

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IDEA Electronic Components Group

UK . 494 parts In-Stock

1+ parts

$3.509

100+ parts

-

1k+ parts

$3.158

10k+ parts

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494

$3.509

-

$3.158

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AZTECH Wire

Italy . 556 parts In-Stock

1+ parts

$8.432

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556

$8.432

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One Stop Electronics

USA . 1,111 parts In-Stock

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$20.000

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1,111

$20.000

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Corphita

USA . 4,885 parts In-Stock

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Overview

Unlock the power of advanced technology with the TMS27C256JL-12 from Texas Instruments. Dive into a world of endless possibilities with this high-quality EPROM, perfect for a wide range of applications. With its exceptional reliability and performance, this product offers unparalleled value and benefits to customers looking for top-notch memory solutions. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the TMS27C256JL-12 and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, making it suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures stable performance and compatibility with standard power sources.

Organization: 32KX8

With an organization of 32KX8, this EPROM offers a large storage capacity and efficient data retrieval for various applications.

Temperature Grade: COMMERCIAL

Designed for commercial temperature range, this EPROM is suitable for general-purpose use in industrial and consumer electronics.

Memory Density: 262144 bit

High memory density of 262144 bits allows for storing a large amount of data in this EPROM, making it ideal for complex systems.

Technical Specifications

EPROM TMS27C256JL-12 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS27C256JL-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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