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TMS27C32-150JE4

Texas Instruments

TMS27C32-150JE4 by Texas Instruments

TMS27C32-150JE4 by Texas Instruments is a 4KX8 EPROM with 150 ns access time, 3-STATE output, and CMOS technology. It operates at -40 to 85 °C, has a supply voltage of 5V, and is used in industrial applications for memory storage due to its 32768 bit density.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,935 parts In-Stock

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Vyrian

USA . 4,765 parts In-Stock

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4,765

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One Stop Electronics

USA . 1,439 parts In-Stock

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$2.000

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1,439

$2.000

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Parana Technologies

USA . 1,465 parts In-Stock

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$2.498

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$2.989

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$2.498

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$2.989

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DigiPath Technology Company

USA . 662 parts In-Stock

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$2.751

100+ parts

$2.531

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662

$2.751

$2.531

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ChromeModa Solutions

Germany . 3,792 parts In-Stock

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$2.807

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$2.302

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$2.807

$2.302

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IDEA Electronic Components Group

UK . 718 parts In-Stock

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$2.807

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$2.526

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718

$2.807

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$2.526

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AZTECH Wire

Italy . 731 parts In-Stock

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$10.235

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731

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Corphita

USA . 3,168 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C32-150JE4 by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-quality products that excel in performance and durability. This EPROM memory device offers a wide range of applications, from industrial automation to consumer electronics. With a fast access time of 150ns and a memory density of 32768 bits, this IC type UVPROM delivers superior value and benefits to customers seeking dependable memory solutions. Trust Texas Instruments for cutting-edge technology that meets your data storage needs effortlessly.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability of the EPROM, making it suitable for industrial applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power to the EPROM for consistent performance.

Organization: 4KX8

With an organizational structure of 4KX8, this EPROM offers a good balance between memory capacity and data width, making it versatile for various applications.

Technology: CMOS

Utilizing CMOS technology enables low power consumption and high speed operation, making this EPROM efficient and reliable.

Parallel or Serial: PARALLEL

Operating in parallel mode allows for faster data transfer and programming, making this EPROM suitable for applications requiring high-speed performance.

Technical Specifications

EPROM TMS27C32-150JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C32-150JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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