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M27C1001-15F6

STMicroelectronics

M27C1001-15F6 by STMicroelectronics

M27C1001-15F6 by STMicroelectronics is a 128KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 150ns and memory density of 1048576 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,857 parts In-Stock

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Digiode

USA . 3,651 parts In-Stock

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MRC Electronics

USA . 1,074 parts In-Stock

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ECAB

Sweden . 296 parts In-Stock

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Anansix

USA . 148 parts In-Stock

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ComSIT Distribution GmbH

Germany . 109 parts In-Stock

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Vectronix, Inc

USA . 51 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 41 parts In-Stock

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GES GmbH

Germany . 37 parts In-Stock

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Inland Empire Components Inc.

USA . 22 parts In-Stock

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Q Components

USA . 6 parts In-Stock

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Sinequanon

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IDEA Electronic Components Group

UK . 536 parts In-Stock

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$3.674

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$3.306

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MKK Technologies

India . 1,042 parts In-Stock

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$6.908

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DigiPath Technology Company

USA . 1,042 parts In-Stock

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Parana Technologies

USA . 2,167 parts In-Stock

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Corphita

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SIE Connect GmbH (Excess)

Germany . 355 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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A-Plus Industry Inc.

USA . 11 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Discover the cutting-edge M27C1001-15F6 EPROM by STMicroelectronics, renowned for its superior quality and reliability. Ideal for industrial applications, this product offers unmatched value with its advanced technology and high memory density of 1048576 bits. With a maximum access time of 150 ns, this UVPROM ensures fast and efficient performance, making it the perfect choice for your memory needs. Trust STMicroelectronics to deliver top-notch solutions for your business requirements.

Feature Benefit Bullets

Package Body Material : CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability, making the EPROM resistant to high temperatures and physical damage.

Nominal Supply Voltage / Vsup (V) : 5

Operating at a standard voltage of 5V ensures compatibility with most electronic systems and makes integration easier.

No. of Terminals : 32

Having a sufficient number of terminals allows for versatile connectivity options and compatibility with various systems.

Maximum Operating Temperature : 85 °C

The EPROM can operate efficiently at high temperatures, ensuring reliable performance in demanding environments.

Technology : CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Memory Density : 1048576 bit

With a high memory density, the EPROM can store a large amount of data, making it suitable for applications requiring extensive memory capacity.

Maximum Access Time : 150 ns

The EPROM offers fast access times, allowing for quick retrieval and processing of data, which is essential for high-speed applications.

Technical Specifications

EPROM M27C1001-15F6 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

JESD-609 Code:

e3

Length:

41.885 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C1001-15F6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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