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TMS27C210A-25JE4

Texas Instruments

TMS27C210A-25JE4 by Texas Instruments

TMS27C210A-25JE4 by Texas Instruments is a 64KX16 EPROM with 250ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and INDUSTRIAL temperature grade. Ideal for applications requiring high memory density and fast data retrieval in industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,241 parts In-Stock

1+ parts

-

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5,241

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Digiode

USA . 3,287 parts In-Stock

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3,287

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 132 parts In-Stock

1+ parts

$3.621

100+ parts

-

1k+ parts

$4.133

10k+ parts

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132

$3.621

-

$4.133

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DigiPath Technology Company

USA . 1,093 parts In-Stock

1+ parts

$3.987

100+ parts

$3.668

1k+ parts

-

10k+ parts

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1,093

$3.987

$3.668

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ChromeModa Solutions

Germany . 2,690 parts In-Stock

1+ parts

$4.068

100+ parts

$3.336

1k+ parts

-

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2,690

$4.068

$3.336

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IDEA Electronic Components Group

UK . 1,834 parts In-Stock

1+ parts

$4.068

100+ parts

-

1k+ parts

$3.661

10k+ parts

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1,834

$4.068

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$3.661

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AZTECH Wire

Italy . 578 parts In-Stock

1+ parts

$6.510

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578

$6.510

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One Stop Electronics

USA . 1,155 parts In-Stock

1+ parts

$22.000

100+ parts

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1,155

$22.000

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Corphita

USA . 447 parts In-Stock

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447

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Overview

Unlock the power of advanced technology with the TMS27C210A-25JE4 by Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers cutting-edge EPROM solutions that are perfect for industrial applications. This versatile memory IC offers high performance and efficiency, making it a valuable asset for any project. Experience seamless operation and fast access times with the TMS27C210A-25JE4, providing you with the competitive edge you need to succeed.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired body material ensures durability and reliability for the EPROM chip, making it a good choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V makes it compatible with standard power systems, allowing for easy integration.

Organization: 64KX16

With an organization of 64Kx16, this EPROM chip offers a high memory capacity, suitable for storing large amounts of data efficiently.

Technology: CMOS

The CMOS technology used in this EPROM chip ensures low power consumption and high speed performance, making it a reliable choice for various applications.

Maximum Access Time: 250 ns

The fast maximum access time of 250 ns ensures quick data retrieval, making this EPROM chip ideal for applications requiring rapid response times.

Technical Specifications

EPROM TMS27C210A-25JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T40

Length:

52.07 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-25JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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