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TMS2532-45JL

Texas Instruments

TMS2532-45JL by Texas Instruments

TMS2532-45JL by Texas Instruments is a 4KX8 EPROM with 32768 bit memory density. Operating at 5V, it has a max access time of 450ns and operates in parallel mode. Ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 6,635 parts In-Stock

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Digiode

USA . 2,559 parts In-Stock

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Rebound Electronics

UK . 196 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 20 parts In-Stock

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Carlin Systems, Inc.

USA . 13 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 9 parts In-Stock

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Semi Source

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Q Components

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Elcom Components

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Parana Technologies

USA . 1,433 parts In-Stock

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$5.109

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$5.696

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IDEA Electronic Components Group

UK . 139 parts In-Stock

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$5.740

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$5.166

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ChromeModa Solutions

Germany . 11 parts In-Stock

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$5.740

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$4.707

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AZTECH Wire

Italy . 364 parts In-Stock

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$13.535

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One Stop Electronics

USA . 1,115 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 807 parts In-Stock

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$5.175

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Glotronic Ltd.

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Assy Fe

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Overview

Experience the reliability and performance of Texas Instruments with the TMS2532-45JL EPROM. This high-quality memory IC offers customers a trustworthy solution for their parallel memory needs. With a wide operating temperature range and a low supply voltage, this EPROM is ideal for a variety of commercial applications. Trust in Texas Instruments to provide you with a durable and efficient memory solution that will meet your needs with ease.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures durability and reliability, making this product suitable for a wide range of applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to memory locations, providing efficient data processing and retrieval.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures stable and consistent power delivery, enhancing the performance and longevity of the product.

No. of Terminals: 24

Having 24 terminals enables seamless connectivity and communication with external devices, facilitating easy integration into various systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high heat conditions, making it suitable for rugged environments.

Organization: 4KX8

An organization of 4KX8 allows for efficient storage and retrieval of data in a structured manner, optimizing performance and operational speed.

Technology: CMOS

The CMOS technology used in this product offers low power consumption, fast operation, and high noise immunity, making it energy-efficient and reliable.

Parallel or Serial: PARALLEL

The parallel mode of operation enables simultaneous data transfer, enhancing overall system efficiency and performance.

Memory IC Type: UVPROM

The use of UVPROM memory IC type offers non-volatile storage and erasable programmability, ensuring data integrity and security.

Maximum Access Time: 450 ns

With a maximum access time of 450 ns, this product provides quick and efficient access to data, reducing processing delays and improving overall system responsiveness.

Technical Specifications

EPROM TMS2532-45JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-CDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2532-45JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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