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TMS276425JP4

Texas Instruments

TMS276425JP4 by Texas Instruments

TMS276425JP4 by Texas Instruments is an 8Kx8 EPROM with 65536 bit memory density. Operating at 5V, it offers a max access time of 250ns and features a 3-STATE output. Ideal for applications requiring non-volatile memory storage in devices such as industrial control systems and embedded electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,624 parts In-Stock

1+ parts

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5,624

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Digiode

USA . 3,056 parts In-Stock

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3,056

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Q Components

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,104 parts In-Stock

1+ parts

$4.665

100+ parts

-

1k+ parts

$5.147

10k+ parts

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2,104

$4.665

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$5.147

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DigiPath Technology Company

USA . 1,968 parts In-Stock

1+ parts

$5.137

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1,968

$5.137

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ChromeModa Solutions

Germany . 2,466 parts In-Stock

1+ parts

$5.242

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$4.298

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2,466

$5.242

$4.298

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IDEA Electronic Components Group

UK . 1,563 parts In-Stock

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$5.242

100+ parts

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$4.718

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1,563

$5.242

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$4.718

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AZTECH Wire

Italy . 232 parts In-Stock

1+ parts

$8.882

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232

$8.882

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One Stop Electronics

USA . 784 parts In-Stock

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$16.000

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784

$16.000

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Corphita

USA . 351 parts In-Stock

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Overview

Experience exceptional quality and reliability with the TMS276425JP4 EPROM by Texas Instruments. This innovative product boasts a ceramic, metal-sealed co-fired package, ensuring durability and longevity. Ideal for a wide range of applications, this EPROM offers customers unparalleled value and benefits. Whether you're looking to upgrade your technology or enhance your systems, the TMS276425JP4 delivers top-notch performance and efficiency. Trust Texas Instruments for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and reliability, making the EPROM suitable for harsh environments and long-term usage.

Nominal Supply Voltage / Vsup (V): 5

A standardized supply voltage of 5V ensures compatibility with most systems, making integration easier.

No. of Words: 8192 words

With a large capacity of 8192 words, this EPROM can store a significant amount of data, making it suitable for various applications.

Technology: NMOS

NMOS technology offers fast access times and low power consumption, making this EPROM efficient and responsive.

Memory IC Type: UVPROM

Ultraviolet (UV) erasable programmable read-only memory (UVPROM) allows for easy reprogramming of the memory, offering flexibility and adaptability.

Technical Specifications

EPROM TMS276425JP4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS276425JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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