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SMJ27C512-25JM

Texas Instruments

SMJ27C512-25JM by Texas Instruments

The Texas Instruments SMJ27C512-25JM is a 64KX8 EPROM with 125°C max temp, -55°C min temp, and 250 ns access time. Commonly used in military applications due to its MIL-Grade tech, it operates at 5V with 524288-bit memory density and through-hole terminal form.

Median Price

$178.875

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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NAC Semi

USA . 2 parts In-Stock

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$59.750

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American Microsemiconductor Inc.

USA . 12 parts In-Stock

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$298.000

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Vyrian

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Digiode

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MRC Electronics

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Electronic Expediters

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Resion

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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Odyssey Electronics LTD

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Atlantic Semiconductor

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Semi Source

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Manoshevitz Elec. Sales

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One Stop Electronics

USA . 624 parts In-Stock

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Parana Technologies

USA . 1,382 parts In-Stock

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$3.856

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$4.341

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ChromeModa Solutions

Germany . 5,606 parts In-Stock

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$4.333

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$3.553

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IDEA Electronic Components Group

UK . 1,141 parts In-Stock

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AZTECH Wire

Italy . 456 parts In-Stock

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$15.874

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Kepictronics

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Corphita

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DigiPath Technology Company

USA . 1,380 parts In-Stock

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A-Plus Industry Inc.

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Overview

Upgrade your electronics with the SMJ27C512-25JM by Texas Instruments, a top-of-the-line EPROM that offers reliable performance and durability. Produced by a trusted manufacturer, this ceramic, glass-sealed package provides unparalleled quality for various applications. With a 64KX8 organization and 3-STATE output characteristics, this CMOS technology-based memory IC delivers fast access times and low standby current. Trust Texas Instruments to bring you cutting-edge technology that meets military-grade standards, ensuring your devices operate smoothly and efficiently. Experience the value and benefits of the SMJ27C512-25JM today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides strong protection for the EPROM, ensuring durability and resistance to damage.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the EPROM without requiring synchronization with other devices, increasing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, making it compatible with many systems and easy to integrate.

Output Characteristics: 3-STATE

Enables the EPROM to switch its output to a high-impedance state, reducing power consumption and allowing multiple devices to share the same data bus.

Technology: CMOS

Utilizes CMOS technology for low power consumption, high noise immunity, and compatibility with a wide range of systems.

Technical Specifications

EPROM SMJ27C512-25JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.000325 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C512-25JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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