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TMS27C64JL

Texas Instruments

TMS27C64JL by Texas Instruments

TMS27C64JL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 250ns access time, and 65536-bit memory density. It operates at 5V, has a programming voltage of 12.5V, and is used in commercial-grade applications requiring reliable non-volatile memory storage.

Median Price

$12.000

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 3 parts In-Stock

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$1.879

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Bristol Electronics

USA . 13 parts In-Stock

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$12.000

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$14.700

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Vyrian

USA . 2,676 parts In-Stock

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Digiode

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Semi Source

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Q Components

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MRC Electronics

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Prism Electronics

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North Shore Components

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ECAB

Sweden . 35 parts In-Stock

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Vectronix, Inc

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J & M Industries LLC

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Resion

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Parana Technologies

USA . 1,999 parts In-Stock

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$3.014

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$3.524

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DigiPath Technology Company

USA . 201 parts In-Stock

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$3.319

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$3.054

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ChromeModa Solutions

Germany . 1,886 parts In-Stock

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$3.387

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$2.777

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IDEA Electronic Components Group

UK . 222 parts In-Stock

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$3.387

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AZTECH Wire

Italy . 437 parts In-Stock

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$14.992

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One Stop Electronics

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Corphita

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A-Plus Industry Inc.

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Perfect Parts

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Assy Fe

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Overview

Unlock the power of advanced memory solutions with the TMS27C64JL by Texas Instruments. Crafted with precision and expertise, this EPROM offers reliable performance in a wide range of applications. With a focus on quality and innovation, Texas Instruments delivers a product that exceeds expectations. Experience seamless operation and enhanced efficiency with this versatile device. Upgrade your systems today and discover the unparalleled value and benefits that the TMS27C64JL brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the EPROM, making it suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with most systems and devices.

No. of Terminals: 28

Having 28 terminals allows for more connectivity options and versatility in usage.

Organization: 8KX8

With an organization of 8KX8, this EPROM offers a decent amount of memory storage for various applications.

Technology: CMOS

The CMOS technology used in this EPROM ensures low power consumption and reliable performance.

Maximum Access Time: 250 ns

The fast access time of 250 ns enables quick retrieval and processing of data, enhancing overall efficiency.

Technical Specifications

EPROM TMS27C64JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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