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SMJ27C256JM

Texas Instruments

SMJ27C256JM by Texas Instruments

SMJ27C256JM by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a programming voltage of 12.5V and memory density of 262144 bit. Ideal for military applications requiring reliable non-volatile memory with fast access time of 250 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,002 parts In-Stock

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7,002

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Digiode

USA . 3,508 parts In-Stock

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3,508

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Distributors (Availability)

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Parana Technologies

USA . 367 parts In-Stock

1+ parts

$2.843

100+ parts

-

1k+ parts

$3.331

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367

$2.843

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$3.331

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DigiPath Technology Company

USA . 1,464 parts In-Stock

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$3.130

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$3.130

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IDEA Electronic Components Group

UK . 1,077 parts In-Stock

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$3.194

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$2.875

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1,077

$3.194

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$2.875

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ChromeModa Solutions

Germany . 526 parts In-Stock

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$3.194

100+ parts

$2.619

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526

$3.194

$2.619

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AZTECH Wire

Italy . 217 parts In-Stock

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$5.565

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217

$5.565

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One Stop Electronics

USA . 1,390 parts In-Stock

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$17.000

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$17.000

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Corphita

USA . 1,129 parts In-Stock

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Overview

Unlock the power of reliable data storage with the Texas Instruments SMJ27C256JM EPROM. Manufactured to the highest standards, this product offers unparalleled quality and durability. Ideal for a variety of applications, this EPROM provides a secure and long-lasting solution for your memory needs. Trust in Texas Instruments for top-notch technology that delivers value and peace of mind to customers seeking superior performance.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides better heat dissipation, making the EPROM more reliable and durable in high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with various systems and devices.

Output Characteristics: 3-STATE

3-state output allows for high impedance state, enabling the EPROM to work effectively in bus-oriented systems and prevent bus contention.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the EPROM.

Memory Width: 8

8-bit memory width allows for efficient data storage and retrieval, making the EPROM suitable for various applications requiring moderate storage capacity.

Programming Voltage (V): 12.5

Higher programming voltage of 12.5V ensures faster and more reliable programming of the EPROM, leading to quicker device implementation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125°C ensures the EPROM can function reliably in harsh environmental conditions, increasing its overall lifespan.

Technical Specifications

EPROM SMJ27C256JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ27C256JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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