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TMS27C510-250JE

Texas Instruments

TMS27C510-250JE by Texas Instruments

TMS27C510-250JE by Texas Instruments is a 64KX8 EPROM with 250 ns access time, 524288 bit memory density, and operates at -40 to 85 °C. It is used in industrial applications for storing data with a supply voltage of 4.75V to 5.25V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,282 parts In-Stock

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2,282

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Digiode

USA . 1,391 parts In-Stock

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1,391

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,372 parts In-Stock

1+ parts

$4.000

100+ parts

-

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1,372

$4.000

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Parana Technologies

USA . 1,881 parts In-Stock

1+ parts

$4.559

100+ parts

-

1k+ parts

$5.009

10k+ parts

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1,881

$4.559

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$5.009

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DigiPath Technology Company

USA . 1,238 parts In-Stock

1+ parts

$5.021

100+ parts

$4.619

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-

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1,238

$5.021

$4.619

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ChromeModa Solutions

Germany . 6,935 parts In-Stock

1+ parts

$5.123

100+ parts

$4.201

1k+ parts

-

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6,935

$5.123

$4.201

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IDEA Electronic Components Group

UK . 1,224 parts In-Stock

1+ parts

$5.123

100+ parts

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1k+ parts

$4.611

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1,224

$5.123

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$4.611

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AZTECH Wire

Italy . 895 parts In-Stock

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$10.296

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895

$10.296

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Corphita

USA . 2,690 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS27C510-250JE EPROM by Texas Instruments. With a reputation for excellence, Texas Instruments delivers top-quality products that exceed industry standards. Ideal for industrial applications, this EPROM offers reliable performance and durability. Experience the convenience of asynchronous operation and common input/output type, making integration seamless. Trust in Texas Instruments to provide the highest quality components for your projects, ensuring optimal functionality and efficiency every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides excellent durability and protection for the EPROM, making it suitable for rugged industrial environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and allows for easy integration into existing systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible read and write operations, providing versatility in data access and manipulation.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM can store a large amount of data, making it ideal for applications requiring extensive memory capacity.

Maximum Operating Temperature: 85 °C

The EPROM can operate effectively in high-temperature environments up to 85°C, ensuring reliable performance even in challenging conditions.

Technical Specifications

EPROM TMS27C510-250JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

250 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-250JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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