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TMS27C64JL4

Texas Instruments

TMS27C64JL4 by Texas Instruments

TMS27C64JL4 by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 250 ns access time, and 5V supply. Ideal for commercial applications, it offers a memory density of 65536 bit in a ceramic-metal package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,107 parts In-Stock

1+ parts

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6,107

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Digiode

USA . 4,849 parts In-Stock

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4,849

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,477 parts In-Stock

1+ parts

$1.000

100+ parts

-

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1,477

$1.000

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Parana Technologies

USA . 1,911 parts In-Stock

1+ parts

$3.007

100+ parts

-

1k+ parts

$3.514

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1,911

$3.007

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$3.514

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ChromeModa Solutions

Germany . 6,055 parts In-Stock

1+ parts

$3.379

100+ parts

$2.771

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6,055

$3.379

$2.771

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IDEA Electronic Components Group

UK . 906 parts In-Stock

1+ parts

$3.379

100+ parts

-

1k+ parts

$3.041

10k+ parts

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906

$3.379

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$3.041

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AZTECH Wire

Italy . 636 parts In-Stock

1+ parts

$6.286

100+ parts

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636

$6.286

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Corphita

USA . 4,344 parts In-Stock

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4,344

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DigiPath Technology Company

USA . 1,490 parts In-Stock

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$3.047

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1,490

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$3.047

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Overview

Unlock endless possibilities with the Texas Instruments TMS27C64JL4 EPROM. Known for their top-quality manufacturing, Texas Instruments delivers reliable products that exceed expectations. Perfect for a wide range of applications, this EPROM offers unmatched value and benefits to customers. Say goodbye to limitations and hello to innovation with the TMS27C64JL4 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent durability and protection for the EPROM, making it suitable for harsh environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for fast access and retrieval of data, enhancing the overall performance of the EPROM.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard electronic systems, making it easy to integrate this EPROM into various applications.

Maximum Operating Temperature: 70 °C

The EPROM can operate efficiently at temperatures up to 70°C, making it suitable for a wide range of operating environments.

Memory Density: 65536 bit

With a memory density of 65536 bits, this EPROM offers ample storage capacity for data, programs, and other information, making it a versatile choice for memory-intensive applications.

Technical Specifications

EPROM TMS27C64JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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