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TMS27C128-20JE4

Texas Instruments

TMS27C128-20JE4 by Texas Instruments

TMS27C128-20JE4 by Texas Instruments is a 16KX8 EPROM with 200ns access time, 5V supply voltage, and 3-STATE output. Commonly used in industrial applications for memory storage due to its 131072-bit density and parallel interface.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,887 parts In-Stock

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Digiode

USA . 2,668 parts In-Stock

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2,668

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Distributors (Availability)

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Parana Technologies

USA . 1,754 parts In-Stock

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$5.324

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$5.971

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$5.324

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$5.971

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DigiPath Technology Company

USA . 1,388 parts In-Stock

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$5.862

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$5.393

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$5.862

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ChromeModa Solutions

Germany . 1,559 parts In-Stock

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$5.982

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$4.905

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$4.905

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IDEA Electronic Components Group

UK . 144 parts In-Stock

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$5.982

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$5.384

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One Stop Electronics

USA . 306 parts In-Stock

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$11.000

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306

$11.000

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AZTECH Wire

Italy . 821 parts In-Stock

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$16.089

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Corphita

USA . 4,261 parts In-Stock

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Overview

Upgrade your electronics with the TMS27C128-20JE4 by Texas Instruments, a top-quality EPROM that offers unmatched reliability and performance. Perfect for industrial applications, this memory chip boasts a 16KX8 organization and 3-STATE output characteristics. With a programming voltage of 13V and a maximum access time of 200ns, this chip ensures fast and efficient operation. Trust Texas Instruments for superior technology and experience the benefits of high-quality components in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package provides excellent durability and resistance to environmental factors, ensuring long-term reliability.

No. of Words: 16384 words

Large word capacity allows for storing a significant amount of data, making it suitable for applications requiring extensive memory storage.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent control of data transfer, enabling efficient and synchronized communication between components.

Maximum Access Time: 200 ns

Fast access time ensures quick retrieval of data, enhancing overall performance and responsiveness of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, increasing energy efficiency and reliability of the product.

Memory Density: 131072 bit

High memory density enables storing a large amount of information in a compact space, making it suitable for space-constrained applications.

Technical Specifications

EPROM TMS27C128-20JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-20JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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