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TMS27C210A-20JE4

Texas Instruments

TMS27C210A-20JE4 by Texas Instruments

TMS27C210A-20JE4 by Texas Instruments is a 64KX16 EPROM with CMOS technology. It operates asynchronously at 5V, has 40 terminals in an IN-LINE package style, and offers a max access time of 200ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,677 parts In-Stock

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7,677

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Digiode

USA . 4,827 parts In-Stock

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4,827

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Distributors (Availability)

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Parana Technologies

USA . 2,331 parts In-Stock

1+ parts

$3.076

100+ parts

-

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$3.592

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2,331

$3.076

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$3.592

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IDEA Electronic Components Group

UK . 2,054 parts In-Stock

1+ parts

$3.456

100+ parts

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$3.110

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2,054

$3.456

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$3.110

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ChromeModa Solutions

Germany . 1,526 parts In-Stock

1+ parts

$3.456

100+ parts

$2.834

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1,526

$3.456

$2.834

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AZTECH Wire

Italy . 750 parts In-Stock

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$8.756

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750

$8.756

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One Stop Electronics

USA . 134 parts In-Stock

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$20.000

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134

$20.000

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DigiPath Technology Company

USA . 2,273 parts In-Stock

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$3.116

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2,273

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$3.116

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Corphita

USA . 2,047 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the TMS27C210A-20JE4 EPROM. This versatile memory chip offers endless possibilities in industrial applications, providing efficient data storage and retrieval with its 64KX16 organization. With a wide operating temperature range and low power consumption, this chip is a cost-effective solution for your electronic design needs. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent durability and reliability, making this EPROM suitable for industrial applications where a rugged component is needed.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V, this EPROM is compatible with many systems and power supplies, ensuring easy integration into existing setups.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation, offering precise control in data retrieval and storage operations.

Memory Density: 1048576 bit

With a high memory density, this EPROM can store a large amount of data efficiently, making it suitable for applications requiring extensive memory storage.

Maximum Operating Temperature: 85 °C

The EPROM can operate at high temperatures up to 85°C, making it ideal for use in industrial environments where thermal conditions may vary.

Technical Specifications

EPROM TMS27C210A-20JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T40

Length:

52.07 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-20JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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