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5962-8961406QXX

Texas Instruments

5962-8961406QXX by Texas Instruments

The Texas Instruments 5962-8961406QXX is a MILITARY-grade EPROM with 128KX8 organization, CMOS technology, and 120 ns access time. It operates at temperatures from -55 to 125 °C and has a supply voltage range of 4.5V to 5.5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,439 parts In-Stock

1+ parts

-

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4,439

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Digiode

USA . 3,462 parts In-Stock

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3,462

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Distributors (Availability)

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One Stop Electronics

USA . 1,248 parts In-Stock

1+ parts

$2.000

100+ parts

-

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1,248

$2.000

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Parana Technologies

USA . 327 parts In-Stock

1+ parts

$2.051

100+ parts

-

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$2.574

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327

$2.051

-

$2.574

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DigiPath Technology Company

USA . 2,188 parts In-Stock

1+ parts

$2.259

100+ parts

$2.078

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2,188

$2.259

$2.078

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ChromeModa Solutions

Germany . 6,595 parts In-Stock

1+ parts

$2.305

100+ parts

$1.890

1k+ parts

-

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6,595

$2.305

$1.890

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IDEA Electronic Components Group

UK . 350 parts In-Stock

1+ parts

$2.305

100+ parts

-

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$2.074

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350

$2.305

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$2.074

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AZTECH Wire

Italy . 765 parts In-Stock

1+ parts

$18.613

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765

$18.613

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Corphita

USA . 1,938 parts In-Stock

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1,938

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Native Components

USA . 789 parts In-Stock

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789

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Northwest PG Solutions

USA . 626 parts In-Stock

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626

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Overview

Unlock the power of cutting-edge technology with the 5962-8961406QXX by Texas Instruments. Crafted with precision and expertise, this EPROM offers unparalleled quality and reliability. Ideal for military-grade applications, this EPROM boasts a wide operating temperature range and robust construction. Experience seamless performance and enhanced functionality with this advanced memory IC. Discover the difference Texas Instruments can make in your projects. Elevate your designs with the 5962-8961406QXX today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and protection for the EPROM, ensuring reliable performance and long-lasting quality.

Operating Mode: ASYNCHRONOUS

Allows for efficient and independent operation of the EPROM, enhancing overall system performance.

Nominal Supply Voltage: 5V

Compatible with standard voltage requirements, making it suitable for a wide range of applications.

No. of Words: 131072 words

Offers a large memory capacity, allowing for ample storage of data and information.

Memory Density: 1048576 bit

High memory density enables storing a large amount of data in a compact space, ideal for space-constrained applications.

Maximum Access Time: 120 ns

Fast access time ensures quick retrieval of data, enhancing overall system speed and efficiency.

Technical Specifications

EPROM 5962-8961406QXX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

JESD-30 Code:

R-CDIP-T32

JESD-609 Code:

e0

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128KX8

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

7.493 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-8961406QXX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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