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SMJ27C256-30J

Texas Instruments

SMJ27C256-30J by Texas Instruments

SMJ27C256-30J by Texas Instruments is a 32Kx8 EPROM with 300ns access time, operating at -55 to 125 °C. It features a 5V supply voltage, 3-state output, and MILITARY temperature grade. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,582 parts In-Stock

1+ parts

-

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1k+ parts

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8,582

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Digiode

USA . 2,186 parts In-Stock

1+ parts

-

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-

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2,186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,077 parts In-Stock

1+ parts

$4.073

100+ parts

$378.206

1k+ parts

$3.665

10k+ parts

-

1,077

$4.073

$378.206

$3.665

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DigiPath Technology Company

USA . 2,033 parts In-Stock

1+ parts

$4.484

100+ parts

-

1k+ parts

-

10k+ parts

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2,033

$4.484

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ChromeModa Solutions

Germany . 6,463 parts In-Stock

1+ parts

$4.576

100+ parts

$3.752

1k+ parts

-

10k+ parts

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6,463

$4.576

$3.752

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IDEA Electronic Components Group

UK . 70 parts In-Stock

1+ parts

$4.576

100+ parts

-

1k+ parts

$4.118

10k+ parts

-

70

$4.576

-

$4.118

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AZTECH Wire

Italy . 240 parts In-Stock

1+ parts

$8.799

100+ parts

-

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10k+ parts

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240

$8.799

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One Stop Electronics

USA . 563 parts In-Stock

1+ parts

$13.000

100+ parts

-

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563

$13.000

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Corphita

USA . 295 parts In-Stock

1+ parts

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295

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Overview

Unlock the power of cutting-edge technology with the SMJ27C256-30J by Texas Instruments. This top-of-the-line EPROM boasts unparalleled quality and reliability, thanks to Texas Instrument's reputation for excellence in semiconductor manufacturing. Ideal for a wide range of applications, this memory IC offers customers exceptional value and benefits through its superior performance and robust design. Say goodbye to limitations and hello to endless possibilities with the SMJ27C256-30J.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and resistance to environmental factors, making the EPROM reliable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, ensuring compatibility with most electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for industrial and military applications where heat resistance is crucial.

Memory Density: 262144 bit

Offers a high memory density for storing a large amount of data efficiently.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Maximum Access Time: 300 ns

Provides fast access time, ensuring quick retrieval of data when needed.

Technical Specifications

EPROM SMJ27C256-30J attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SMJ27C256-30J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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