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TMS27C400-12JE

Texas Instruments

TMS27C400-12JE by Texas Instruments

TMS27C400-12JE by Texas Instruments is a 512KX8 EPROM with 120 ns access time, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring reliable memory storage in parallel mode with a supply voltage of 4.5V to 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,711 parts In-Stock

1+ parts

-

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4,711

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Digiode

USA . 1,866 parts In-Stock

1+ parts

-

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1,866

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 985 parts In-Stock

1+ parts

$4.257

100+ parts

$395.315

1k+ parts

$3.831

10k+ parts

-

985

$4.257

$395.315

$3.831

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DigiPath Technology Company

USA . 714 parts In-Stock

1+ parts

$4.687

100+ parts

$4.312

1k+ parts

-

10k+ parts

-

714

$4.687

$4.312

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ChromeModa Solutions

Germany . 6,776 parts In-Stock

1+ parts

$4.783

100+ parts

$3.922

1k+ parts

-

10k+ parts

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6,776

$4.783

$3.922

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IDEA Electronic Components Group

UK . 1,633 parts In-Stock

1+ parts

$4.783

100+ parts

-

1k+ parts

$4.305

10k+ parts

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1,633

$4.783

-

$4.305

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One Stop Electronics

USA . 432 parts In-Stock

1+ parts

$7.000

100+ parts

-

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432

$7.000

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AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$13.379

100+ parts

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618

$13.379

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Corphita

USA . 2,704 parts In-Stock

1+ parts

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2,704

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Overview

Unlock endless possibilities with the Texas Instruments TMS27C400-12JE EPROM. Crafted with precision and innovation, this memory IC offers unparalleled reliability and performance. From industrial automation to consumer electronics, this versatile component is designed to excel in a variety of applications. Experience seamless operation and peace of mind knowing that you have a quality product from a trusted manufacturer. Elevate your projects with the TMS27C400-12JE and unleash the power of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the EPROM chip, ensuring reliability in various environments.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without needing to be synchronized with external signals, offering flexibility in usage.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply for seamless integration with existing systems.

Memory Density: 4194304 bit

High memory density allows for storage of large amounts of data, making it suitable for complex applications.

Maximum Access Time: 120 ns

Fast access time ensures quick retrieval of stored information, enhancing performance efficiency.

Technical Specifications

EPROM TMS27C400-12JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Alternate Memory Width:

16

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C400-12JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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