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TMM27512AD-17

Toshiba

TMM27512AD-17 by Toshiba

Toshiba TMM27512AD-17 EPROM features 64KX8 organization, 170 ns access time, and 524288 bit memory density. Ideal for commercial applications requiring a 5V supply voltage and asynchronous operation in a ceramic, glass-sealed package.

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Advanced Electronics

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Overview

Unlock the power of reliable data storage with the TMM27512AD-17 by Toshiba. With a reputation for excellence, Toshiba delivers high-quality EPROM products that are perfect for a variety of applications. This ceramic, glass-sealed package offers customers unparalleled value with its 64KX8 organization, 3-STATE output characteristics, and 170 ns maximum access time. Trust in Toshiba's expertise and elevate your projects with the TMM27512AD-17 EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and protection for the EPROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into various systems.

No. of Terminals: 28

Having 28 terminals allows for efficient connectivity and communication within a circuit or system, enhancing the overall performance of the product.

Organization: 64KX8

With an organization of 64KX8, this EPROM offers sufficient memory capacity and data organization, making it suitable for storing and retrieving large amounts of information.

Technology: NMOS

The NMOS technology used in this EPROM provides fast and efficient performance, making it ideal for high-speed data processing and storage applications.

Maximum Access Time: 170 ns

With a maximum access time of 170 ns, this EPROM ensures quick and responsive data access, enhancing the overall efficiency of the product.

Technical Specifications

EPROM TMM27512AD-17 attributes and parameters. Explore more EPROM devices from Toshiba

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.2 mm

Sub-Category:

EPROMs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMM27512AD-17 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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