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TMM2732D

Toshiba

TMM2732D by Toshiba

Toshiba TMM2732D is a 4KX8 EPROM with 32768-bit memory density and 350 ns access time. It operates at a nominal 5V supply voltage, featuring a 3-STATE output for common I/O applications. The MOS technology chip has a temperature range of 0-70°C, making it suitable for commercial-grade electronic systems.

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Overview

Experience superior quality and reliability with the Toshiba TMM2732D EPROM. Manufactured by Toshiba, a leader in semiconductor technology, this product offers unmatched performance and durability. Ideal for various applications, this 4Kx8 memory device provides customers with value and benefits that are second to none. Upgrade your electronics with the TMM2732D and enjoy the advantages of cutting-edge technology at an affordable price.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package material provides excellent thermal conductivity and reliability, making the EPROM suitable for high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes the EPROM compatible with common electronic systems and power sources.

Organization: 4KX8

The organization of 4KX8 means the EPROM has a capacity of 4096 words with a memory width of 8 bits per word, offering sufficient memory for data storage.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow the EPROM to provide high impedance output when disabled, reducing power consumption and circuit loading.

Programming Voltage (V): 25

The programming voltage of 25V enables reliable and efficient programming of the EPROM, ensuring accurate data storage and retrieval.

Technology: MOS

Utilizing Metal-Oxide-Semiconductor technology, the EPROM delivers low power consumption, high speed operation, and excellent reliability for electronic applications.

Memory Density: 32768 bit

With a memory density of 32768 bits, the EPROM offers ample storage capacity for various data and program requirements in electronic systems.

Maximum Access Time: 350 ns

The fast maximum access time of 350 ns allows quick read and write operations, enhancing the overall performance of the EPROM in data processing tasks.

Technical Specifications

EPROM TMM2732D attributes and parameters. Explore more EPROM devices from Toshiba

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

JESD-609 Code:

e0

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

25

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMM2732D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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