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TMS27C32-20JL4

Texas Instruments

TMS27C32-20JL4 by Texas Instruments

TMS27C32-20JL4 by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 200ns and memory density of 32768 bits. Ideal for commercial applications requiring fast parallel memory access in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,139 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,139

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Digiode

USA . 4,524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,524

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,493 parts In-Stock

1+ parts

$3.808

100+ parts

-

1k+ parts

$4.298

10k+ parts

-

1,493

$3.808

-

$4.298

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DigiPath Technology Company

USA . 2,243 parts In-Stock

1+ parts

$4.193

100+ parts

$3.858

1k+ parts

-

10k+ parts

-

2,243

$4.193

$3.858

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ChromeModa Solutions

Germany . 1,947 parts In-Stock

1+ parts

$4.279

100+ parts

$3.509

1k+ parts

-

10k+ parts

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1,947

$4.279

$3.509

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IDEA Electronic Components Group

UK . 417 parts In-Stock

1+ parts

$4.279

100+ parts

-

1k+ parts

$3.851

10k+ parts

-

417

$4.279

-

$3.851

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One Stop Electronics

USA . 826 parts In-Stock

1+ parts

$5.000

100+ parts

-

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10k+ parts

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826

$5.000

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AZTECH Wire

Italy . 640 parts In-Stock

1+ parts

$19.322

100+ parts

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640

$19.322

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Corphita

USA . 1,973 parts In-Stock

1+ parts

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1,973

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Overview

Discover the TMS27C32-20JL4 by Texas Instruments, a top-of-the-line EPROM that boasts unmatched quality and reliability. With a reputation for excellence, Texas Instruments delivers cutting-edge technology in a compact and efficient package. Ideal for a wide range of applications, this EPROM offers customers exceptional value with its 3-STATE output characteristics, 4KX8 organization, and lightning-fast 200 ns maximum access time. Trust Texas Instruments to provide you with the best EPROM solution on the market.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material ensures durability and reliability of the EPROM, making it a good choice for long-term storage of data.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate the EPROM into various systems.

Organization: 4KX8

With an organization of 4KX8, this EPROM offers a storage capacity of 4 kilobytes with 8 bits per word, providing ample space for storing data efficiently.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance, making this EPROM suitable for energy-efficient applications.

Maximum Access Time: 200 ns

Having a fast maximum access time of 200 nanoseconds allows for quick retrieval of data, making this EPROM ideal for applications requiring speedy data access.

Technical Specifications

EPROM TMS27C32-20JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C32-20JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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