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TMS27C128-1JL

Texas Instruments

TMS27C128-1JL by Texas Instruments

TMS27C128-1JL by Texas Instruments is a 16KX8 EPROM with 150 ns access time, 3-STATE output, and 5V nominal voltage. It is used in commercial applications for storing data in parallel format with a memory density of 131072 bits.

Median Price

$8.780

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 45 parts In-Stock

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Vyrian

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Q Components

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Digiode

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Jameco Electronics

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Manoshevitz Elec. Sales

Israel . 158 parts In-Stock

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Inland Empire Components Inc.

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Prism Electronics

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LWI Electronics Inc

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MRC Electronics

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Electronic Expediters

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Semtec, LLC

USA . 68 parts In-Stock

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Atlantic Semiconductor

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Electronics Depot

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A2Z Electronics, Inc.

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DF Sales Co.

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DF Sales Co.

USA . 27 parts In-Stock

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MISTER SPROCKETS

USA . 12 parts In-Stock

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Bristol Electronics

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Legend Electronics Inc.

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EMSNET

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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GES GmbH

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Elcom Components

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Distributors (Availability)

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Parana Technologies

USA . 578 parts In-Stock

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$4.975

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$5.520

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DigiPath Technology Company

USA . 1,365 parts In-Stock

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$5.478

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$5.040

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ChromeModa Solutions

Germany . 738 parts In-Stock

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$5.590

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$4.584

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IDEA Electronic Components Group

UK . 656 parts In-Stock

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$5.031

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AZTECH Wire

Italy . 441 parts In-Stock

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$12.694

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One Stop Electronics

USA . 801 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Corphita

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RC Electronics

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Perfect Parts

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Kepictronics

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Overview

Unlock the power of reliable data storage and retrieval with the TMS27C128-1JL EPROM by Texas Instruments. Crafted with premium ceramic and glass-sealed materials, this high-quality memory chip offers seamless operation in various applications. With a user-friendly interface and efficient 3-state output characteristics, this EPROM provides fast access times and low standby currents, making it a valuable asset for your electronic projects. Trust in Texas Instruments' expertise and elevate your designs with the TMS27C128-1JL EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material provides durability and protection, ensuring the longevity of the EPROM product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible communication with the EPROM, providing greater control and efficiency.

Organization: 16KX8

The organization of 16KX8 allows for efficient storage and retrieval of data in a structured and organized manner.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Maximum Access Time: 150 ns

The fast access time ensures quick data retrieval, making the EPROM suitable for applications that require high-speed performance.

Technical Specifications

EPROM TMS27C128-1JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-1JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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