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TMS27C210A-10JE4

Texas Instruments

TMS27C210A-10JE4 by Texas Instruments

TMS27C210A-10JE4 by Texas Instruments is a 64KX16 EPROM with 100ns access time, 3-STATE output, and operates at industrial temperature grade. It has a parallel interface, through-hole terminals, and consumes up to 50mA supply current. Ideal for applications requiring non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,350 parts In-Stock

1+ parts

-

100+ parts

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8,350

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Digiode

USA . 3,992 parts In-Stock

1+ parts

-

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-

1k+ parts

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3,992

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 961 parts In-Stock

1+ parts

$5.067

100+ parts

-

1k+ parts

$5.636

10k+ parts

-

961

$5.067

-

$5.636

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DigiPath Technology Company

USA . 1,348 parts In-Stock

1+ parts

$5.579

100+ parts

$5.133

1k+ parts

-

10k+ parts

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1,348

$5.579

$5.133

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IDEA Electronic Components Group

UK . 1,380 parts In-Stock

1+ parts

$5.693

100+ parts

-

1k+ parts

$5.124

10k+ parts

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1,380

$5.693

-

$5.124

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ChromeModa Solutions

Germany . 154 parts In-Stock

1+ parts

$5.693

100+ parts

$4.668

1k+ parts

-

10k+ parts

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154

$5.693

$4.668

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One Stop Electronics

USA . 1,638 parts In-Stock

1+ parts

$10.000

100+ parts

-

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10k+ parts

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1,638

$10.000

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AZTECH Wire

Italy . 654 parts In-Stock

1+ parts

$16.811

100+ parts

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654

$16.811

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Corphita

USA . 2,021 parts In-Stock

1+ parts

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2,021

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Overview

Experience superior quality and reliability with the TMS27C210A-10JE4 EPROM by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge technology for various applications. This EPROM offers unmatched value with its 64KX16 organization and 3-STATE output characteristics. With a wide operating temperature range and industrial-grade technology, this product ensures optimal performance in any environment. Upgrade your systems with the TMS27C210A-10JE4 EPROM for enhanced efficiency and reliability.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides excellent durability and protection for the EPROM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this EPROM is compatible with standard voltage requirements, making it easy to integrate into existing systems.

Memory Density: 1048576 bit

The high memory density of 1048576 bit allows for storing a large amount of data in a compact EPROM, making it suitable for applications requiring high storage capacity.

Technology: CMOS

The use of CMOS technology in this EPROM results in low power consumption, making it energy-efficient and ideal for battery-powered devices.

Maximum Standby Current: 0.0001 Amp

The low standby current of 0.0001 Amp helps in conserving power when the EPROM is not in active use, contributing to energy efficiency.

Technical Specifications

EPROM TMS27C210A-10JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-10JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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