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TMS27C240-8JL

Texas Instruments

TMS27C240-8JL by Texas Instruments

TMS27C240-8JL by Texas Instruments is a 256KX16 EPROM with 80ns access time, 3-STATE output, and operates at 5V. It is used in commercial applications for storing data parallelly with a memory density of 4194304 bit.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,481 parts In-Stock

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Digiode

USA . 971 parts In-Stock

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971

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Parana Technologies

USA . 2,204 parts In-Stock

1+ parts

$2.228

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$2.732

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2,204

$2.228

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$2.732

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ChromeModa Solutions

Germany . 5,825 parts In-Stock

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$2.503

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$2.052

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IDEA Electronic Components Group

UK . 724 parts In-Stock

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$2.503

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$2.253

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724

$2.503

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One Stop Electronics

USA . 940 parts In-Stock

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$3.000

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940

$3.000

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AZTECH Wire

Italy . 421 parts In-Stock

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$12.884

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Corphita

USA . 4,782 parts In-Stock

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DigiPath Technology Company

USA . 2,016 parts In-Stock

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$2.257

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Overview

Unlock the power of cutting-edge technology with the TMS27C240-8JL EPROM by Texas Instruments. Known for their superior quality and reliability, Texas Instruments offers a wide range of applications for this EPROM category, from consumer electronics to industrial machinery. Experience seamless operation with its asynchronous operating mode and common input/output type, all while enjoying the benefits of its 256KX16 organization and 3-STATE output characteristics. Elevate your projects with the value and performance that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the EPROM, ensuring reliability in demanding environments.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures consistent performance of the EPROM.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronized timing signals, increasing flexibility in use.

Organization: 256KX16

Offers a large memory organization of 256K words by 16 bits, suitable for storing a significant amount of data.

Output Characteristics: 3-STATE

Enables the EPROM to have three output states (high impedance, logic high, logic low), enhancing flexibility in interfacing with other components.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Memory Density: 4194304 bit

High memory density allows for storing a large amount of data in a compact EPROM, making it suitable for various applications.

Maximum Access Time: 80 ns

Fast access time of 80 nanoseconds ensures quick retrieval of data from the EPROM, enhancing overall system performance.

Technical Specifications

EPROM TMS27C240-8JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C240-8JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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