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SMJ27C128-2JM

Texas Instruments

SMJ27C128-2JM by Texas Instruments

The Texas Instruments SMJ27C128-2JM is a 16KX8 EPROM with 3-STATE output, operating at temperatures from -55 to 125 °C. It has a programming voltage of 12.5V and memory density of 131072 bits, suitable for military-grade applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,452 parts In-Stock

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3,452

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Digiode

USA . 1,417 parts In-Stock

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1,417

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Distributors (Availability)

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Parana Technologies

USA . 712 parts In-Stock

1+ parts

$5.034

100+ parts

-

1k+ parts

$5.593

10k+ parts

-

712

$5.034

-

$5.593

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ChromeModa Solutions

Germany . 5,896 parts In-Stock

1+ parts

$5.656

100+ parts

$4.638

1k+ parts

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5,896

$5.656

$4.638

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IDEA Electronic Components Group

UK . 1,507 parts In-Stock

1+ parts

$5.656

100+ parts

-

1k+ parts

$5.090

10k+ parts

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1,507

$5.656

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$5.090

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One Stop Electronics

USA . 1,365 parts In-Stock

1+ parts

$11.000

100+ parts

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1,365

$11.000

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AZTECH Wire

Italy . 444 parts In-Stock

1+ parts

$19.414

100+ parts

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444

$19.414

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Corphita

USA . 3,900 parts In-Stock

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3,900

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DigiPath Technology Company

USA . 328 parts In-Stock

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100+ parts

$5.099

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328

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$5.099

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Overview

Discover the reliable and high-quality SMJ27C128-2JM EPROM by Texas Instruments, a leading manufacturer in the industry. This versatile product is perfect for a wide range of applications, offering customers exceptional value and benefits. With a durable ceramic package body material, common input/output type, and 3-state output characteristics, this EPROM provides ease of use and efficiency. Trust Texas Instruments for top-notch technology and choose the SMJ27C128-2JM for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection to the enclosed components, ensuring durability and reliability in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes the product compatible with most electronic systems, offering easy integration.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient use of space on a circuit board, making it suitable for compact designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand elevated temperatures, ensuring reliability in varied operating conditions.

Memory Density: 131072 bit

The high memory density of 131072 bits allows for storing a large amount of data, making the product suitable for applications requiring extensive memory storage.

Maximum Access Time: 200 ns

The fast maximum access time of 200 nanoseconds ensures quick retrieval of data, enhancing the product's performance in time-sensitive applications.

Technical Specifications

EPROM SMJ27C128-2JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ27C128-2JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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