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TMS2732A-20JL

Texas Instruments

TMS2732A-20JL by Texas Instruments

TMS2732A-20JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating at 5V. It features an access time of 200ns and uses NMOS technology. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

Median Price

$11.895

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$11.540

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$8.650

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Forefront Electronics and Design

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Vyrian

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Digiode

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LWI Electronics Inc

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Q Components

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Electronic Expediters

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ComSIT Distribution GmbH

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Corel Iberica Componentes, S.L.

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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J & M Industries LLC

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Electronics Depot

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Mil-Aero Solutions, Inc.

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LIBRA Elektronik GmbH

Germany . 10 parts In-Stock

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Pegasus Components GmbH

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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MRC Electronics

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LittleDiode

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Inland Empire Components Inc.

USA . 4 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 2 parts In-Stock

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Standard Data Resources

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A2Z Electronics, Inc.

USA . 1 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 495 parts In-Stock

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$4.678

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$434.408

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$4.210

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$4.678

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DigiPath Technology Company

USA . 1,023 parts In-Stock

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$5.151

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$4.739

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ChromeModa Solutions

Germany . 2,226 parts In-Stock

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$5.256

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$4.310

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IDEA Electronic Components Group

UK . 776 parts In-Stock

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$5.256

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AZTECH Wire

Italy . 627 parts In-Stock

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One Stop Electronics

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Authorized Procurement Solutions

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Lixinc

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A-Z Elektronik GmbH

Germany . 6,345 parts In-Stock

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Corphita

USA . 2,322 parts In-Stock

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Assy Fe

Spain . 44 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

UK . 24 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the TMS2732A-20JL EPROM. This versatile memory device offers a wide range of applications, providing customers with seamless operation and exceptional performance. With its advanced technology and durable construction, this EPROM delivers unmatched value and benefits to users seeking high-quality memory solutions. Trust Texas Instruments for all your memory needs and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and protection, ensuring the EPROM's reliability in various operating conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation and communication with other devices, providing flexibility and compatibility.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources and compatibility with other components in the system.

No. of Words: 4096 words

With 4096 words of memory capacity, this EPROM offers ample storage for data and program code, suitable for a wide range of applications.

Memory IC Type: UVPROM

The UVPROM technology used in this EPROM offers reliable and non-volatile memory storage, ensuring data retention even in the absence of power.

Technical Specifications

EPROM TMS2732A-20JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS2732A-20JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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