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TMS27C040-10JE

Texas Instruments

TMS27C040-10JE by Texas Instruments

TMS27C040-10JE by Texas Instruments is a 512KX8 EPROM with 100ns access time, operating at 5V. It features 3-STATE output characteristics and uses CMOS technology. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE, WINDOW package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,506 parts In-Stock

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8,506

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Digiode

USA . 4,285 parts In-Stock

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4,285

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Distributors (Availability)

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One Stop Electronics

USA . 557 parts In-Stock

1+ parts

$4.000

100+ parts

-

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557

$4.000

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Parana Technologies

USA . 1,848 parts In-Stock

1+ parts

$4.082

100+ parts

-

1k+ parts

$4.542

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1,848

$4.082

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$4.542

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DigiPath Technology Company

USA . 2,050 parts In-Stock

1+ parts

$4.494

100+ parts

$4.135

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2,050

$4.494

$4.135

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IDEA Electronic Components Group

UK . 1,296 parts In-Stock

1+ parts

$4.586

100+ parts

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1k+ parts

$4.127

10k+ parts

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1,296

$4.586

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$4.127

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ChromeModa Solutions

Germany . 386 parts In-Stock

1+ parts

$4.586

100+ parts

$3.761

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386

$4.586

$3.761

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AZTECH Wire

Italy . 454 parts In-Stock

1+ parts

$8.624

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454

$8.624

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Corphita

USA . 2,023 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS27C040-10JE by Texas Instruments. This EPROM offers unparalleled quality and reliability, making it a top choice for industrial applications. With a wide operating temperature range and low standby current, this memory IC provides exceptional performance while consuming minimal power. Trust in Texas Instruments to deliver innovative solutions that exceed your expectations. Elevate your projects with the TMS27C040-10JE and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the EPROM, making it a reliable choice for long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible access to data, providing efficiency in data retrieval and processing.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

No. of Terminals: 32

The 32 terminals provide ample connectivity options, allowing for versatile integration and setup in a variety of applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even in challenging environmental conditions.

Technology: CMOS

The CMOS technology used in the EPROM ensures low power consumption and high-speed operation, making it energy-efficient and responsive.

Memory Density: 4194304 bit

With a high memory density of 4194304 bits, this EPROM offers ample storage capacity for data-intensive applications, making it suitable for a wide range of uses.

Technical Specifications

EPROM TMS27C040-10JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-10JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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