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TMS27C040-12JL

Texas Instruments

TMS27C040-12JL by Texas Instruments

TMS27C040-12JL by Texas Instruments is a 512KX8 EPROM with 120ns access time, operating at 5V. It features 3-STATE output characteristics and uses CMOS technology for parallel operation. Ideal for applications requiring fast memory access in commercial temperature environments.

Median Price

$3.000

Lifecycle Status

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30

In-Stock Inventory

1k+

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DF Sales Co.

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DF Sales Co.

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American Microsemiconductor Inc.

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Digiode

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Corel Iberica Componentes, S.L.

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LWI Electronics Inc

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Mentor Electronics Marketing, LLC

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ACDS - Activité Composants Distribution Service

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Component Electronics Inc.

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Elcom Components

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Mil-Aero Solutions, Inc.

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Pegasus Components GmbH

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CirComp Electronics, Inc.

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Cyclops Electronics Ltd

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A2Z Electronics, Inc.

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Bristol Electronics

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Parana Technologies

USA . 1,773 parts In-Stock

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DigiPath Technology Company

USA . 1,429 parts In-Stock

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IDEA Electronic Components Group

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ChromeModa Solutions

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AZTECH Wire

Italy . 855 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C040-12JL by Texas Instruments, a top-tier EPROM that guarantees quality performance and durability. Designed with cutting-edge technology, this product offers unmatched value to customers seeking secure and efficient memory solutions. From industrial applications to consumer electronics, the TMS27C040-12JL excels in delivering seamless operation and data protection, making it the ideal choice for all your memory needs. Trust Texas Instruments to provide you with the best EPROM on the market, ensuring optimal performance and peace of mind for all your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, making it suitable for long-term use in various environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making this EPROM easy to integrate into existing systems.

Organization: 512KX8

With an organization of 512KX8, this EPROM offers a high storage capacity and efficient data retrieval, making it ideal for applications requiring a large amount of memory.

Technology: CMOS

Utilizing CMOS technology, this EPROM offers low power consumption and high speed performance, making it an energy-efficient choice for electronic devices.

Maximum Access Time: 120 ns

The fast maximum access time of 120 ns ensures quick read and write operations, enhancing the overall performance of the EPROM in time-sensitive applications.

Technical Specifications

EPROM TMS27C040-12JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-12JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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