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TMS27C510-15JE4

Texas Instruments

TMS27C510-15JE4 by Texas Instruments

TMS27C510-15JE4 by Texas Instruments is a 64KX8 EPROM with 150 ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for storing data securely due to its UVPROM technology and common I/O type.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,952 parts In-Stock

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3,952

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Digiode

USA . 1,791 parts In-Stock

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1,791

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Distributors (Availability)

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Parana Technologies

USA . 733 parts In-Stock

1+ parts

$3.584

100+ parts

-

1k+ parts

$4.104

10k+ parts

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733

$3.584

-

$4.104

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ChromeModa Solutions

Germany . 3,841 parts In-Stock

1+ parts

$4.027

100+ parts

$3.302

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3,841

$4.027

$3.302

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IDEA Electronic Components Group

UK . 780 parts In-Stock

1+ parts

$4.027

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-

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$3.624

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780

$4.027

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$3.624

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One Stop Electronics

USA . 334 parts In-Stock

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$10.000

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334

$10.000

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AZTECH Wire

Italy . 414 parts In-Stock

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$18.174

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414

$18.174

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Corphita

USA . 4,994 parts In-Stock

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DigiPath Technology Company

USA . 616 parts In-Stock

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$3.631

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616

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$3.631

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Overview

Unleash the power of innovation with the TMS27C510-15JE4 EPROM by Texas Instruments. Crafted with precision using ceramic and metal-sealed cofired materials, this memory device offers unparalleled reliability and performance in industrial applications. With a 64KX8 organization and 3-state output characteristics, this EPROM provides seamless operation and efficient data storage. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the TMS27C510-15JE4 EPROM – where quality meets excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability, making it suitable for industrial applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures stable performance and compatibility with standard power supplies.

No. of Terminals: 32

Having 32 terminals allows for efficient connectivity and integration with other components in a circuit.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM can store a large amount of data, making it ideal for applications requiring extensive memory capacity.

Maximum Operating Temperature: 85 °C

The EPROM can operate at temperatures up to 85°C, making it suitable for use in industrial environments where high temperatures may be present.

Technology: CMOS

The CMOS technology used in this EPROM provides low power consumption, high noise immunity, and compatibility with a wide range of devices and systems.

Maximum Access Time: 150 ns

The fast maximum access time of 150 nanoseconds ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

EPROM TMS27C510-15JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-15JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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