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5962-9175204MXX

Texas Instruments

5962-9175204MXX by Texas Instruments

Texas Instruments' 5962-9175204MXX EPROM operates asynchronously with 512KX8 organization. It features a 5V nominal voltage, -55 to 125 °C operating temperature range, and MIL-STD-883 screening level. Ideal for military applications requiring reliable memory storage with fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,927 parts In-Stock

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4,927

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Vyrian

USA . 4,369 parts In-Stock

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4,369

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Distributors (Availability)

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MARBEL Systems

Belgium . 408 parts In-Stock

1+ parts

$3.144

100+ parts

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408

$3.144

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Texas Native Microelectronics

USA . 2,218 parts In-Stock

1+ parts

$3.614

100+ parts

$3.469

1k+ parts

$3.361

10k+ parts

$3.180

2,218

$3.614

$3.469

$3.361

$3.180

Parana Technologies

USA . 922 parts In-Stock

1+ parts

$3.649

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-

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$4.157

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922

$3.649

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$4.157

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DigiPath Technology Company

USA . 171 parts In-Stock

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$4.018

100+ parts

$3.697

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171

$4.018

$3.697

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ChromeModa Solutions

Germany . 4,757 parts In-Stock

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$4.100

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$3.362

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4,757

$4.100

$3.362

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IDEA Electronic Components Group

UK . 2,096 parts In-Stock

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$4.100

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$3.690

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2,096

$4.100

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$3.690

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Kenton Components

USA . 880 parts In-Stock

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$4.337

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$3.816

880

$4.337

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$3.816

Semicontronic

India . 531 parts In-Stock

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$6.000

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$5.850

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$5.820

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531

$6.000

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$5.820

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Qasali Group International

UK . 5,687 parts In-Stock

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$9.758

100+ parts

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$9.075

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$8.587

5,687

$9.758

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$9.075

$8.587

AZTECH Wire

Italy . 320 parts In-Stock

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$15.666

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$15.666

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One Stop Electronics

USA . 248 parts In-Stock

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$16.000

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$16.000

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Native Components

USA . 124 parts In-Stock

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$36.107

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$34.663

124

$36.107

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$34.663

Northwest PG Solutions

USA . 1,188 parts In-Stock

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$39.718

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$39.718

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Corphita

USA . 3,084 parts In-Stock

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3,084

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Supply Digital

USA . 177 parts In-Stock

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Overview

Experience top-notch quality and reliability with the 5962-9175204MXX by Texas Instruments. This EPROM device is manufactured with precision and excellence, meeting MIL-STD-883 screening levels for utmost performance. Ideal for military-grade applications, this memory IC offers a memory density of 4194304 bits with a fast access time of 150 ns. Trust in Texas Instruments for advanced technology and unparalleled value, providing you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring the longevity of the EPROM.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization, providing flexibility in usage.

Nominal Supply Voltage: 5V

Compatible with standard 5V power supplies, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable performance in challenging environments.

Memory IC Type: UVPROM

Utilizes Ultra-Violet erasable programmable read-only memory technology, allowing for easy reprogramming of the memory.

Technical Specifications

EPROM 5962-9175204MXX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

JESD-609 Code:

e0

Length:

42.1005 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

5.588 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-9175204MXX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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