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TMS27C020-150JL

Texas Instruments

TMS27C020-150JL by Texas Instruments

TMS27C020-150JL by Texas Instruments is a 256KX8 EPROM with 150 ns access time, 5V supply voltage, and 32 terminals. It operates in asynchronous mode with a memory density of 2097152 bit. Commonly used for storing program codes in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,114 parts In-Stock

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Digiode

USA . 2,089 parts In-Stock

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2,089

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Distributors (Availability)

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Parana Technologies

USA . 1,804 parts In-Stock

1+ parts

$3.106

100+ parts

-

1k+ parts

$3.625

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1,804

$3.106

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$3.625

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DigiPath Technology Company

USA . 361 parts In-Stock

1+ parts

$3.420

100+ parts

$3.147

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361

$3.420

$3.147

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ChromeModa Solutions

Germany . 4,805 parts In-Stock

1+ parts

$3.490

100+ parts

$2.862

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4,805

$3.490

$2.862

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IDEA Electronic Components Group

UK . 843 parts In-Stock

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$3.490

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$3.141

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843

$3.490

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$3.141

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AZTECH Wire

Italy . 535 parts In-Stock

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$12.594

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535

$12.594

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One Stop Electronics

USA . 869 parts In-Stock

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$16.000

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869

$16.000

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Corphita

USA . 4,573 parts In-Stock

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Overview

Elevate your electronics with the TMS27C020-150JL by Texas Instruments, a top-tier EPROM memory chip that offers unparalleled quality and reliability. Manufactured by industry leaders, this chip boasts a wide range of applications in various electronic devices. With its advanced technology and superior performance, this memory chip provides customers with value, benefits, and advantages that are unmatched in the market. Upgrade your products with the TMS27C020-150JL and experience the difference in quality and efficiency today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and protection for the EPROM, making it suitable for harsh environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making integration and operation easier.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation, making it flexible and versatile for various applications.

Memory Density: 2097152 bit

With a high memory density of 2097152 bits, this EPROM can store a large amount of data efficiently.

Maximum Access Time: 150 ns

The fast maximum access time of 150 nanoseconds ensures quick read/write operations, suitable for high-performance systems.

Technical Specifications

EPROM TMS27C020-150JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C020-150JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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