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M27C512-90F1

STMicroelectronics

M27C512-90F1 by STMicroelectronics

The STMicroelectronics M27C512-90F1 EPROM features 64KX8 organization, 90 ns access time, and 5V nominal voltage. Commonly used in commercial applications, this CMOS technology-based memory IC offers a memory density of 524288 bits and operates in parallel mode with a max standby current of 0.0001 Amp.

Median Price

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Lifecycle Status

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13

In-Stock Inventory

1k+

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Bristol Electronics

USA . 13,897 parts In-Stock

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Atlantic Semiconductor

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Vyrian

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Anansix

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MRC Electronics

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Digiode

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Q Components

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Nova Conductors

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Sensible Micro Corp

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Velocity Electronics

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Electronic Expediters

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Prism Electronics

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Inland Empire Components Inc.

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Corohmni

South Africa . 745 parts In-Stock

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$2.225

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IDEA Electronic Components Group

UK . 1,255 parts In-Stock

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Microchip USA

USA . 361 parts In-Stock

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MKK Technologies

India . 96 parts In-Stock

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DigiPath Technology Company

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AZTECH Wire

Italy . 242 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Corphita

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Argo Parts USA

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Aranea Global

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A-Z Elektronik GmbH

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Parana Technologies

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Alle Elektronik GmbH

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Kepictronics

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Overview

Unlock the power of innovation with the STMicroelectronics M27C512-90F1 EPROM. Crafted with precision and expertise, this memory IC offers unparalleled reliability and performance for a wide range of applications. From industrial automation to automotive electronics, this UVPROM is designed to meet the demands of today's technology-driven world. Trust in STMicroelectronics to deliver cutting-edge solutions that push the boundaries of what's possible. Experience the quality and value of the M27C512-90F1 EPROM and revolutionize your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, making it a reliable choice for long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures efficient and flexible operation, allowing for data to be accessed or written to the EPROM without synchronization requirements.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of systems and applications, making it a versatile and widely applicable EPROM.

Maximum Operating Temperature: 70 °C

The EPROM's ability to operate at up to 70°C makes it suitable for use in various environments and conditions, enhancing its overall reliability.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM offers ample storage capacity for data, programs, or firmware, making it suitable for a wide range of applications.

Technical Specifications

EPROM M27C512-90F1 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Length:

36.92 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C512-90F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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