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5962-8766103XX

Texas Instruments

5962-8766103XX by Texas Instruments

The Texas Instruments 5962-8766103XX EPROM operates asynchronously at 5V, with a memory density of 131072 bits and an organization of 16KX8. This military-grade UVPROM has a max access time of 150ns, making it suitable for high-performance applications requiring fast data retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,376 parts In-Stock

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4,376

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Digiode

USA . 2,048 parts In-Stock

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2,048

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Distributors (Availability)

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Parana Technologies

USA . 702 parts In-Stock

1+ parts

$3.748

100+ parts

-

1k+ parts

$4.246

10k+ parts

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702

$3.748

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$4.246

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DigiPath Technology Company

USA . 1,189 parts In-Stock

1+ parts

$4.127

100+ parts

$3.797

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1,189

$4.127

$3.797

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ChromeModa Solutions

Germany . 6,235 parts In-Stock

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$4.211

100+ parts

$3.453

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$4.211

$3.453

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IDEA Electronic Components Group

UK . 733 parts In-Stock

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$4.211

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$3.790

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733

$4.211

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$3.790

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Semicontronic

India . 824 parts In-Stock

1+ parts

$9.000

100+ parts

$8.775

1k+ parts

$8.730

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824

$9.000

$8.775

$8.730

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AZTECH Wire

Italy . 754 parts In-Stock

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$16.299

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754

$16.299

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One Stop Electronics

USA . 1,009 parts In-Stock

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$19.000

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$19.000

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Marpe Global Electronics

Taiwan . 7,636 parts In-Stock

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QualityLine Systems

Poland . 7,636 parts In-Stock

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7,636

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XL Components Corporation

Australia . 7,636 parts In-Stock

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Northwest PG Solutions

USA . 1,034 parts In-Stock

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Native Components

USA . 793 parts In-Stock

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Corphita

USA . 372 parts In-Stock

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372

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Overview

Experience unparalleled quality and reliability with the Texas Instruments 5962-8766103XX EPROM. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology that exceeds expectations. This EPROM offers endless possibilities for applications, ensuring seamless performance in any setting. With a wide operating temperature range and military-grade durability, this EPROM is built to last. Trust Texas Instruments to provide top-of-the-line products that deliver exceptional value and unmatched benefits to customers.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package body material provides durability and protection for the internal components, making this EPROM a reliable choice for long-term use.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, providing flexibility and efficiency in data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration into existing systems seamless.

Organization: 16KX8

With an organization of 16KX8, this EPROM offers a high memory capacity with efficient data handling capabilities, suitable for a wide range of applications.

Temperature Grade: MILITARY

Designed to meet military-grade standards for temperature range and reliability, this EPROM is a robust choice for demanding environments and critical operations.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance, making this EPROM energy-efficient and fast in data processing.

Memory IC Type: UVPROM

Featuring UVPROM memory IC type, this EPROM offers enhanced security with its ultraviolet erasable programmable memory, ideal for applications requiring data protection.

Technical Specifications

EPROM 5962-8766103XX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-GDIP-T28

Length:

37.1475 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.588 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-8766103XX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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